Vertical-cavity, surface-emission type laser diode and fabrication process thereof

ABSTRACT

A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Rule 1.53(b) continuation of Ser. No. 11/827,818,filed Jul. 13, 2007 now U.S. Pat. No. 7,159,095, which in turn is acontinuation and claims priority of Ser. No. 11/338,220, Jan. 23, 2006,now U.S. Pat. No. 7,260,137, which in turn is a continuation and claimspriority of Ser. No. 10/677,065, filed Oct. 1, 2003, now U.S. Pat. No.7,022,539, which in turn is a divisional of Ser. No. 09/957,507, filedSep. 20, 2001, now U.S. Pat. No. 6,674,785, the entire contents of eachof which are incorporated herein by reference.

BACKGROUND

This disclosure is related to a vertical-cavity, surface-emission-typelaser diode and the process of making the same. Further, the presentinvention relates to a vertical-cavity, surface-emission-typelaser-diode array, an optical transmission module, an opticaltransceiver module and also an optical telecommunication system.

Vertical-cavity, surface-emission-type laser diode is a laser diode thatemits an optical beam in a vertical direction to a substrate. It is usedfor a light source of optical interconnection systems and optical pickupdevices, and the like.

A vertical-cavity, surface-emission-type laser diode has an activeregion including an active layer that produces a laser beam. The activeregion is sandwiched with a pair of reflectors, wherein a semiconductordistributed Bragg reflector, in which a low-refractive index layer and ahigh refractive index layer are laminated alternately, is used widelyfor the reflectors. Materials having a wider bandgap than the activelayer and not causing absorption of the optical beam coming from anactive layer are used for the semiconductor distributed Bragg reflector.Particularly, the materials that achieve a lattice matching with thesubstrate are used so as to avoid lattice relaxation.

Meanwhile, the reflector has to have a high reflectance of 99% or more.Generally, the reflectance of the reflector becomes higher by increasingthe number of stacking. However, production of the vertical-cavity,surface-emission-type laser diode becomes difficult when the number ofstacking in the reflectors is increased excessively. Because of this, itis preferable that there exists a large refractive index differencebetween the low-refractive index layer and the high refractive indexlayer constituting the semiconductor distributed Bragg reflectors. AlAsand GaAs are end-member compositions of the system AlGaAs having alattice constant almost the same as that of GaAs. Further, the materialsof this system can provide a large refractive index differencetherebetween. Because of this reason, it is possible to achieve a highreflectance with fewer number of stacking by using the material of theAlGaAs system.

Thus, the material of the AlGaAs system is used widely.

However, the material containing Al is very reactive, and crystaldefects, originating from Al, are formed easily. For example, oxygenmolecules or water molecules contained in the source material or growthatmosphere are easily incorporated into the crystal as a result ofreaction with Al. Once they are thus incorporated, they form a crystaldefect acting as non-optical recombination center, resulting indegradation of efficacy of optical emission. Further, there is a concernthat the reliability of the device may be degraded due to the existenceof such crystal defects.

Even when the active region is formed by a layer not containing Al, theproblem of non-optical recombination still occurs when Al is containedin the low-refractive index layer (formed of a widegap layer) of thereflector that makes a contact with the active region. Morespecifically, such a non-optical recombination may occur at theinterface between the active region and the reflector when carriers areinjected for recombination. Thereby, the efficacy of optical emissionfalls off inevitably. In order to avoid this adversary influence, it isnecessary to carry out rigorous process control, material puritycontrol, optimization of growth condition, and the like. Still, it isnot easy to produce a device with high quality.

Meanwhile, there are proposals in Japanese Laid-Open Patent Applications08-340146 and 07-307525 to form a semiconductor distributed Braggreflector by using GaInP and GaAs, which are free from Al. However, thedifference of refractive index between GaInP and GaAs is only one-halfthe refractive index difference between AlAs and GaAs. Because of this,the number of stacking in the reflector has to be increasedsignificantly, and the production of the laser diode becomes difficult.Associated with this there arise various problems such as degradation ofyield, increased device resistance, increased time needed for producinga laser diode. Further, because of the increase of total thickness,there appears a difficulty in providing electric interconnection in sucha laser diode.

Meanwhile, it is practiced to use a current confinement structure in theart of laser diode for reducing the threshold of laser oscillation.Japanese Laid-Open Patent Application 7-240506 discloses a structurethat uses a current confinement structure including a high resistancelayer formed by an ion implantation process in combination with asemiconductor distributed Bragg reflector that consists of AlAs/GaAs.Further, Japanese Patent 2,917,971 proposes a vertical-cavity,surface-emission-type laser diode that uses, in addition to an opticalcavity formed by the semiconductor distributed Bragg reflectors of theAlGaAs/GaAs stacked structure, a current confinement structure thatincludes an oxide film formed by selective oxidization of a part of theAl(Ga)As optical cavity structure. In this proposal, the oxidation isconducted by supplying water vapor of high temperature. It should benoted that the oxidation process using water vapor of high temperatureis capable of forming a true insulator of Al_(x)O_(y). According to suchan approach, the distance between the active layer and the currentconfinement layer can controlled exactly by controlling the process ofcrystal growth. Further, it is possible narrow the current pathsignificantly. In view of these, the foregoing construction is suitedfor reducing reactive current and for reducing the active region.Because of this, it is also suited to for reducing electric powerconsumption. Thus, the construction is used widely recently.

It should be noted that the foregoing Japanese Patent 2,917,971 uses thephenomenon that the oxidation rate starts to increase sharply as the Alcontent in the AlGaAs layer is increased. Thus, in order to ensure thatonly the part to be oxidized is oxidized, the foregoing processincreases the Al content of the layer in which the oxidation is to becaused. In this way, it is possible to obtain a current confinementstructure by a selective oxidation process. In view of this, the Alcontent of the AlGaAs layer forming the low-refractive index layer ofthe semiconductor distributed Bragg reflector is set smaller (Ga contentis increased) than the Al content of the Al(Ga)As/GaAs oxidation layer.The composition of Al_(x)Ga_(1-x)As (x=0.97) is used for the selectivelyoxidized layer in the foregoing Japanese Patent 2,917,971, while acomposition of Al_(x)Ga_(1-x)As (x=0.92) is used for the low-refractiveindex layer of the semiconductor distributed Bragg reflector.

In the art of forming a current confinement structure by such aselective oxidation process, an approach is adopted to oxidize an AlAslayer from a sidewall surface thereof. In order that such a process isto be conducted, it is necessary to remove unnecessary layers by meansof a mesa etching process such that the sidewall surface of the AlAslayer to be oxidized is exposed. However, in view of variation in theetching rate, there may be caused variation of mesa height within a lot.Further, there may be caused a lot-to-lot variation of mesa height. Whensuch a variation has been caused, the device characteristic may bescattered correspondingly.

Current optical-fiber telecommunication technology uses a laser diode oflong wavelength band of 1.3 μm or 1.55 μm for utilizing the wavelengthslot of quartz optical fibers in which the optical loss is minimum. Theoptical fiber telecommunication system is spreading rapidly and it isexpected that it may reach a subscriber terminal (Fiber To The Home;FTTH) in a near future. Furthermore, the technology of informationtransmission by way of optical signals is going to be introduced even toa device-to-device interconnection system inside an apparatus or even toan interconnection system inside a device. Like this, the technology ofinformation transmission will become important still more. In order torealize such an optical interconnection system, it is essential torealize an optical telecommunication module of unprecedented low-cost.Thus, there is a keen demand for a small, long wavelength-band laserdiode of low electric power consumption, with excellent temperaturecharacteristics, capable of eliminating the need of a cooling system.

Currently, the material of GaInPAs system formed on an InP substrate,which is a group III-V semiconductor material, monopolizes the market.It should be noted that the material of the GaInPAs system can be tunedto the foregoing wavelength band. However, the material of the InPsystem has a drawback, because of the small discontinuity in theconduction band between the cladding layer (spacer layer) and the activelayer, in that the electrons injected into the active layer are poorlyconfined, particularly when temperature of the device is increased. Thisresults in a decrease of efficiency. Further, the materials that achievelattice matching with an InP substrate cannot provide large refractiveindex difference suitable for realizing a semiconductor distributedBragg reflector. As a result, the vertical-cavity, surface-emission-typelaser diode of the long wavelength having a performance suitable forpractical use has not been obtained.

The material of the GaInNAs system formed on a GaAs substrate isproposed in the Japanese Laid-Open Patent Application No. 6-37355, asthe material that can settle the foregoing problems. It should be notedthat GaInNAs is a group III-V mixed crystal containing N in addition toother group V element. In the system of GaInNAs, it is possible toachieve lattice matching with a GaAs substrate by adding N to GaInAshaving a lattice constant larger than that of GaAs. By doing so, thebandgap energy is reduced also. Thus, it becomes possible to realizeoptical emission at the wavelength band of 1.3 μm or 1.5 μm. Kondou, etal., calculated the band lineup of this system in the article, Jpn. J.Appl. Phys. Vol. 35 (1996), pp. 1273-1275. As this is a material thatcan achieve lattice matching with GaAs, a large band discontinuity canbe realized by using AlGaAs for the cladding layer. Because of this,there is an expectation that a laser diode having a high characteristictemperature may be realized by using such a material. Further, it shouldbe noted that the material of GaInNAs can be formed on a GaAs substrate.Thus, it becomes possible to construct a/the semiconductor multilayerreflector by using an Al(Ga)As/GaAs material system. Thereby, it becomespossible to reduce the number of stacking in the multilayer reflectorsignificantly as compared with the case of forming the multilayerreflector on the InP substrate. Further, it becomes possible to form anAlAs selective-oxidation layer as the current confinement structure, andthe operating current is reduced effectively.

However, the problem noted above arises in the case the material systemof Al(Ga)As/GaAs is used for the semiconductor multilayer reflector, asproposed in the Japanese Laid-Open Patent Application 10-303515 orJapanese Laid-Open Patent Application 11-145560. Further, the problemsimilar to above arises also in the case an AlAs selective-oxidationlayer is used for the current confinement structure.

SUMMARY OF THE INVENTION

In an aspect of this disclosure, there is provided a novel and usefulvertical-cavity, surface-emission-type laser diode and the process ofmaking the same.

In another aspect of this disclosure, there is provided avertical-cavity, surface-emission-type laser diode having excellentreliability and easily fabricated, without increasing the totalthickness thereof.

In another aspect of this disclosure, there is provided avertical-cavity, surface-emission-type laser-diode array, an opticaltransmission module, an optical transceiver module, and an opticaltelecommunication system.

In another aspect of this disclosure, there is provided avertical-cavity, surface-emission-type laser diode having an opticalcavity structure on or above a semiconductor substrate, theoptical-cavity structure comprising an active region containing at leastone active layer that produces a laser beam, and upper and lowerreflectors sandwiching the active region to form the optical cavity, thelower reflector including a semiconductor distributed Bragg reflectorhaving a refractive index that changes periodically, the lower reflectorreflecting an optical beam incident thereto by diffraction, thesemiconductor distributed Bragg reflector comprising alow-refractive-index layer of Al_(x)Ga_(1-x)As (0<x≦1) and ahigh-refractive-index layer of Al_(y)Ga_(1-y)As (0≦y≦x<1), wherein anon-optical recombination elimination layer is provided between theactive layer and the lower reflect.

In the above-mentioned structure, a non-optical recombinationelimination layer is provided between the active layer and the lowerreflector in the construction in which the active region (an activelayer is included), in which injection of carriers is made, issandwiched by the upper and lower reflectors. Thus, the phenomenon thatthe crystal defects that originate from Al crawl up to the active layerat the time of crystal growth is effectively restrained, even in thecase the lower reflector is formed of a semiconductor distributed Braggreflector including a semiconductor layer that contains Al. Thereby, theadversary effect caused by the defects is suppressed, and the activelayer can be formed with high crystal quality. Accordingly, non-opticalrecombination caused by the crystal defects that originate from Al isreduced, and the efficiency of optical emission and the reliability ofthe laser diode are improved. As compared with the case in which thelow-refractive index layers of the semiconductor distributed Braggreflector are all formed of Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1),the semiconductor distributed Bragg reflector of the present inventioncan maintain a large refractive index difference. It should be notedthat the reflector of the present invention is formed mostly of thematerial of the AlGaAs system. Thus, a reflectance is achieved for thereflectors with fewer number of stacking. Because of this, it ispossible to obtain the high reflectance without increasing the number ofstacking of in the reflector or increasing the total thickness of thedevice. In the laser diode of the present invention, the total thicknessof the vertical-cavity, surface-emission-type laser diode does notincrease, and the operating current is small. Further, the laser diodehas excellent reliability. As such, the vertical-cavity,surface-emission-type laser diode can be produced easily.

In another aspect of this disclosure, there is provided avertical-cavity, surface-emission-type laser diode having an opticalcavity on or above a semiconductor substrate, the optical cavitycomprising an active region containing at least one active layer thatproduces a laser beam, and upper and lower reflectors sandwiching theactive region to form the optical cavity, each of the upper and lowerreflectors including a semiconductor distributed Bragg reflector inwhich a refractive index is changed periodically, the upper and lowerreflectors reflecting an optical beam incident thereto, thesemiconductor distributed Bragg reflector comprising alow-refractive-index layer of Al_(x)Ga_(1-x)As (0<x≦1) and ahigh-refractive-index layer of Al_(y)Ga_(1-y)As (0≦x≦1), wherein anon-optical recombination elimination layer is provided between theactive layer and the lower reflector and a non-optical recombinationelimination layer is provided between the active layer and the upperreflector.

According to the above-mentioned optical cavity, a non-opticalrecombination elimination layer is provided between the active layer andeach of the lower and upper reflectors in the construction in which theactive region (an active layer is included), in which injection ofcarriers is made, is sandwiched by the upper and lower reflectors. Thus,the phenomenon that the crystal defects that originate from Al crawl upto the active layer at the time of crystal growth is effectivelyrestrained, even in the case the lower reflector is formed of asemiconductor distributed Bragg reflector including a semiconductorlayer that contains Al. Particularly, the active region, in whichcarrier injection occurs, is sandwiched by the non-optical recombinationat both top part and bottom part thereof. Thereby, non-opticalrecombination caused by the crystal defects that originate from Al isreduced particularly effectively, and the efficiency of optical emissionand the reliability of the laser diode are improved easily. While theeffect of the non-optical recombination elimination layer is obtainedwhen it is inserted to one of the reflectors, the construction in whichthe non-optical recombination elimination layer is provided to each ofthe reflectors is extremely effective for eliminating the influence ofthe Al defects. As compared with the case in which the low-refractiveindex layers of the semiconductor distributed Bragg reflector are allformed of Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1), the semiconductordistributed Bragg reflector of the present invention can maintain alarge refractive index difference. It should be noted that the reflectorof the present invention is formed mostly of the material of the AlGaAssystem. Thus, a reflectance is achieved for the reflectors with fewernumber of stacking. Because of this, it is possible to obtain the highreflectance without increasing the number of stacking of in thereflector or increasing the total thickness of the device. In the laserdiode of the present invention, the total thickness of thevertical-cavity, surface-emission-type laser diode does not increase,and the operating current is small. Further, the laser diode hasexcellent reliability. As such, the vertical-cavity,surface-emission-type laser diode can be produced easily.

By using Ga_(x)In_(1-x)PyAs1-y (0<x≦1, 0<y≦1) for the non-opticalrecombination elimination layer in combination with a GaAs substrate,the carriers that cause a leak to the layer containing Al through theGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) is eliminated substantiallyparticularly in the case that the bandgap of the material used for theactive layer is smaller than that of GaAs, in view of the fact that thebandgap of the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer, whichis substantially free from Al (Al content is 1% or less with regard tothe group III elements), is larger than the bandgap of GaAs. Because ofthis, non-optical recombination can be prevented. Accordingly, avertical-cavity, surface-emission-type laser diode, operating with smallcurrent and having excellent reliability is realized.

In the case the lattice constant of the Ga_(x)In_(1-x)P_(y)As_(1-y)(0<x≦1, 0<y≦1) layer is smaller than the lattice constant of the GaAssubstrate, the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layeraccumulates a tensile strain therein. Thus, crawling-up of defects fromthe substrate to a growth layer during a growth process is effectivelysuppressed. As a result, the efficacy of optical emission is improved.Further, it becomes possible to grow a layer accumulating a compressivestrain of 2% or more, for example, as the active layer. Furthermore, itbecomes possible to grow a strained layer with a thickness exceeding thecritical film thickness.

In view of the fact that the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1)layer contacts with the active region, and in view of the fact that thebandgap energy of the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layerbecome larger with decreasing lattice constant, the hetero-barrierheight between the active region and the Ga_(x)In_(1-x)P_(y)As_(1-y)(0<x≦1, 0<y≦1) is increased. Thus, the efficiency of carrier confinementis improved. Thereby, improvement with regard to temperaturecharacteristics and threshold current are achieved.

In the case the lattice constant of the Ga_(x)In_(1-x)P_(y)As_(1-y)(0<x≦1, 0<y≦1) layer is larger than the lattice constant of the GaAssemiconductor substrate, the Ga_(x)In_(1-x)PyAs1-y (0<x≦1, 0<y≦1)accumulates a the compressive strain. Thus, crawling up of defectsformed during the growth process or existing in the substrate to thegrowth layer is suppressed, and the efficiency of optical emission isimproved. Further, it becomes possible to grow a layer accumulating acompressive strain of 2% or more. Further, it becomes possible to grow astrained layer with a thickness exceeding the critical thickness.

In the case the sense of strain of the Ga_(x)In_(1-x)P_(y)As_(1-y)(0<x≦1, 0<y≦1) layer is the same as the sense of the strain of theactive layer, there is an effect, in addition to the above-noted effectof insertion of the strained layer, in that the compressive strain thatthe active layer senses is reduced substantially. Thus, the adversaryeffect of the defects existing on the surface of a foundation layer, onwhich the growth is made, in the state immediately before the start ofthe growth process is reduced substantially. As a result, the crystalquality of the active layer improved and the characteristics of thelaser diode are improved. Especially, this improvement is effective invertical-cavity, surface-emission-type laser diode of long wavelengthband in which growth of thick film is necessary.

The non-optical recombination elimination layer of the GaInPAs systemcontaining P functions as an etching stopper with respect to the layerof the AlGaAs system that contains Al as a principal component. Becauseof this, the height of the mesa structure provided by a wet etchingprocess for selective oxidation process is controlled exactly. By usingthe mesa structure, it becomes possible to form a current confinementlayer by selectively oxidizing the layer that contains Al and As at thelocation above the non-optical recombination elimination layer. In thisway, the accuracy of process control is improved. Further, thehomogeneity and reproducibility is improved with regard to the devicecharacteristics. Furthermore, the yield is improved, and the fabricationcost it reduced.

Further, according to the present invention, it becomes possible to forma vertical-cavity, surface-emission-type laser diode for use in longwavelength band of 0.9 μm or more on a GaAs substrate by using any ofGaInNAs or GaInAs.

By providing a compressive strain of 2.0% or more to the active layer inthe present invention, it becomes possible to realize a vertical-cavity,surface-emission-type laser diode operable at the wavelength hithertonot possible. For example, by using GaInAs for the active layer, itbecomes possible to provide a vertical-cavity, surface-emission-typelaser diode operable at the wavelength of 1.1 μm or longer. By usingGaInNAs for the active layer, the crystal quality of the active layer isimproved, and the threshold current density is reduced. Thereby, itbecomes possible to provide a vertical-cavity, surface-emission-typelaser diode having excellent reliability and still operable at thewavelength band of 1.3 μm or longer.

By arranging such a vertical-cavity, surface-emission-type laser diodein the form of one-dimensional or two-dimensional array, it is possibleto provide a vertical-cavity, surface-emission-type laser-diode arraywith excellent homogeneity and reproducibility. In the case of formingan array, in-plane homogeneity influences the element-to-elementvariation of characteristics. As noted before, it is possible to use thecrystal layer GaInPAs system as an etching stopper with respect to thecrystal layer of AlGaAs system. Because of this, the height of the mesastructure used for the selective oxidation process is controlled exactlyover the elements included in the array. Because of this, not only theprecision of process control at the time of device fabrication isimproved, but also the homogeneity of characteristics between theelements in the array and reproducibility of the vertical-cavity,surface-emission-type laser-diode array are improved also.

By using the vertical-cavity, surface-emission-type laser diode or thelaser-diode array of the present invention as an optical source, inother words by using the vertical-cavity, surface-emission-type laserdiode low-cost, high-quality and excellent reliability for the opticalsource, a low cost, highly efficient and reliable optical transmissionmodule is realized.

By using the vertical-cavity, surface-emission-type laser diode orlaser-diode array of the present invention as an optical source, inother words by using the vertical-cavity, surface-emission-type laserdiode low-cost, high-quality and excellent reliability for the opticalsource, a low cost, highly efficient and reliable optical transceivermodule is realized.

By using the vertical-cavity, surface-emission-type laser diode orlaser-diode array of the present invention as an optical source, inother words by using the vertical-cavity, surface-emission-type laserdiode low-cost, high-quality and excellent reliability for the opticalsource, a low cost, highly efficient and reliable opticaltelecommunication, including an optical-fiber telecommunication systemand an optical interconnection system, is realized.

By providing a process for removing residual Al source material,residual Al product, residual Al compound or residual Al from a locationsuch as the gas supply line or growth chamber, in which contact with anitrogen compound source material or impurity included therein tends tooccur, in the interval after the growth of the semiconductor layercontaining Al but before the start of growth of the active layer thatcontains nitrogen in the fabrication process of the vertical-cavity,surface-emission-type laser diode, it becomes possible in the presentinvention to decrease the amount of oxygen taken into the active layerthat contains nitrogen during the growth process of the active layer.Thereby, it becomes possible to grow the semiconductor light-emittingdevice without decreasing the efficiency of optical emission even in thecase the active layer containing nitrogen is formed on the upper part ofthe semiconductor layer containing Al in the semiconductorlight-emitting device.

By providing a process for removing residual Al source material,residual Al product, residual Al compound or residual Al from a locationsuch as the gas supply line or growth chamber, in which contact with anitrogen compound source material or impurity included therein tends tooccur, in the interval after the growth of the semiconductor layercontaining Al and before the end of growth of the non-opticalrecombination elimination layer in the fabrication process of thevertical-cavity, surface-emission-type laser diode, it becomes possiblein the present invention to decrease the amount of oxygen taken into theactive layer that contains nitrogen during the growth process of theactive layer. Further, the adversary effect of non-optical recombinationoriginating caused by oxygen taken into the growth interrupt interfaceat the time electric current is injected for device operation issuccessfully eliminated. Thereby, it becomes possible to obtain thesemiconductor light-emitting device having a high efficiency of opticalemission even in the case the active layer containing nitrogen is formedon the upper part of the semiconductor layer containing Al in thesemiconductor light-emitting device.

By providing a process for removing residual Al source material,residual Al product, residual Al compound or residual Al from a locationsuch as the gas supply line or growth chamber, in which contact with anitrogen compound source material or impurity included therein tends tooccur, in the fabrication process of the vertical-cavity,surface-emission-type laser diode by an MOCVD process that uses sourcematerials of at least a metal organic Al source and a nitrogen compoundsource, it becomes possible to improve the efficiency of opticalemission of the semiconductor light-emitting device as compared with thecase in which no such a removal is made.

Other aspects and further features will become apparent from thefollowing detailed description when read in conjunction with theattached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are diagrams showing the construction of avertical-cavity, surface-emission-type laser diode according to a firstembodiment of the present invention;

FIGS. 2A and 2B are diagrams showing the construction of avertical-cavity, surface-emission-type laser diode according to a secondembodiment of the present invention;

FIGS. 3A and 3B are diagrams showing a first constitutional example ofthe vertical-cavity, surface-emission-type laser diode of a sixthembodiment of the present invention;

FIGS. 4A and 4B are diagrams showing a second constitutional example ofthe vertical-cavity, surface-emission-type laser diode of the sixthembodiment of the present invention;

FIG. 5 is a diagram showing theoretical value and experimental value ofcritical thickness for a system of GaInAs layer formed on a GaAssubstrate;

FIG. 6 is a diagram showing the relationship between PL centralwavelength and PL intensity for the PL emission occurring in a GaInAssingle quantum well layer;

FIG. 7 is a diagram showing an example of relationship between thethreshold current density and nitrogen contents for a GaInNAs laserdiode (edge-emission type) having an In content of 10%;

FIG. 8 is a diagram showing the relationship between oscillationwavelength and threshold current density of a GaInAs/GaAs-DQW laserdiode of the present invention having a high compressive strain;

FIGS. 9A and 9B are diagrams showing the construction of avertical-cavity, surface-emission-type laser diode of Example 1;

FIGS. 10A and 10B are diagrams showing the construction of avertical-cavity, surface-emission-type laser diode of Example 2;

FIG. 11 is a diagram showing the overall construction of an opticaltransmission module that combines a 1.3 μm band GaInNAs vertical-cavity,surface-emission-type laser diode of Example 2 and a quartz opticalfiber;

FIG. 12 is a diagram showing the overall construction of an opticaltransceiver module that combines a 1.3 μm band GaInNAs vertical-cavity,surface-emission-type laser diode of Example 2 and a receiver photodiodewith an optical fiber;

FIG. 13 is a diagram showing a room temperature photoluminescencespectrum from an active layer formed of GaInNAs/GaAs double quantum wellstructure;

FIG. 14 is a diagram showing a basic structure of the sample used in athirteenth embodiment of the present invention;

FIG. 15 is a diagram showing the depth distribution profile of nitrogen(N) and oxygen (O) in a laser diode of FIG. 14 for the case the laserdiode has an active layer of GaInNAs/GaAs double quantum well structure,a GaAs intermediate layer and an AlGaAs cladding layer, for the case thelaser diode is formed by using a single epitaxial growth (MOCVD)apparatus;

FIG. 16 is a diagram showing a depth distribution profile of Al in thesame sample of FIG. 15;

FIG. 17 is a diagram showing an example of the laser diode deviceaccording to a fourteenth embodiment of the present invention;

FIG. 18 is a diagram showing a depth distribution profile of Al in depthdirection of the laser diode of FIG. 17 for case the growth crystallayers is interrupted between the a first lower intermediate layer and asecond lower intermediate layer and conducted a purging process for 60minutes;

FIG. 19 is a diagram showing a depth distribution profile of nitrogen(N) and oxygen (O) in the same device as FIG. 18;

FIGS. 20A and 20B are diagrams showing the construction ofvertical-cavity, surface-emission-type laser diode of Example 7; and

FIGS. 21A and 21B are diagrams showing the construction of avertical-cavity, surface-emission-type laser diode of Example 8.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

FIGS. 1A and 1B are diagrams showing a constitutional example of avertical-cavity, surface-emission-type laser diode according to a firstembodiment of the present invention, wherein FIG. 1B is an enlarged viewof the active region of FIG. 1A.

Referring to FIGS. 1A and 1B, the vertical-cavity, surface-emission-typelaser diode of the first embodiment includes an active region 3 on asemiconductor substrate 1, wherein the active region 3 includes at leastone an active layer 2 that produces a laser beam therein. Further, itincludes a cavity structure formed of upper reflector 4 and a lowerreflector 5 that sandwich the active layer from upward direction anddownward direction for obtaining the laser beam. Each of the upperreflector 4 and the lower reflector 5 is formed of a semiconductordistributed Bragg reflector having a periodically changing refractiveindex, wherein the semiconductor distributed Bragg reflector reflects anincident optical beam incident thereto by optical interference. Thesemiconductor distributed Bragg reflector includes a low-refractiveindex layer of Al_(x)Ga_(1-x)As (0<x≦1) and a high-refractive indexlayer of Al_(y)Ga_(1-y)As (≦y<x≦1). Further, a non-optical recombinationelimination layer 6 is provided between the active layer 2 and the lowerreflector 5.

In the first embodiment, it is noted that the semiconductor distributedBragg reflector forming the lower reflector 5 includes a semiconductorlayer containing Al. On the other hand, it is also noted that thenon-optical recombination elimination layer 6 is provided between theactive layer 2 and the lower reflector 5. Because of this, crawling upof crystal defects, originating from Al and tend to be caused at thetime of crystal growth of the active layer 2, to the active layer 2 issuppressed in the active region 3 (includes the active layer 2)sandwiched by the upper reflector 4 and the lower reflector 5. Thereby,the adversary influence associated with the Al defects is suppressed,and the active layer 2 can be formed with high crystal quality. In thisactive region 3, carrier injection is made. Thereby, non-opticalrecombination originating from crystal defects, which in turn are causedby Al, is effectively reduced, and the vertical-cavity,surface-emission-type laser diode of the present invention can beoperated with reliability. Further, efficiency of optical emission andreliability are improved. As compared with the case in which all thelow-refractive index layers of the semiconductor distributed Braggreflector forming the lower reflector 5 are formed ofGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1), a large refractive indexdifference is achieved in the present invention. Because of this, a highreflectance is achieved with fewer number of stacking. In other words,it is possible to obtain the above-mentioned effect without increasingthe number of stacking of the reflector, or without increasing the totalfilm thickness of the device.

It is possible to construct the reflector 4 by a dielectric multilayermirror. In this case, the cladding layer used for confining the carriersmay be provided between the upper reflector 4 and the active layer 6. Inthe construction of FIG. 1A, the optical output is taken out from theupper reflector 4. However, it is also possible to take out the opticaloutput from the substrate 1.

Second Embodiment

FIGS. 2A and 2B show the constitutional example of a vertical-cavity,surface-emission-type laser diode according to a second embodiment ofthe present invention, wherein FIG. 2B shows an enlarged view of theactive region of FIG. 2A.

Referring to FIGS. 2A and 2B, the vertical-cavity, surface-emission typelaser diode of the second embodiment of the present invention has anoptical cavity structure including an upper reflector 14 and a lowerreflector 15 that sandwich an active region 13 therebetween respectivelyfrom upward direction and from downward direction on a semiconductorsubstrate 11 for obtaining a laser beam, wherein the active region 13includes at least one active layer 12 that produces the laser beam. Eachof the upper reflector 14 and the lower reflector 15 has a refractiveindex profile that changes periodically and forms a semiconductordistributed Bragg reflector that reflects an incident optical beamincident thereto by optical interference. The semiconductor distributedBragg reflector includes a low-refractive index layer ofAl_(x)Ga_(1-x)As (0<x≦1) and a high-refractive index layer ofAl_(y)Ga_(1-y)As (0≦y<x≦1). Further, non-optical recombinationelimination layers 16 and 17 are provided respectively between theactive layer 12 and the lower reflector 15 and between the active layer12 and the upper reflector 14.

By providing the non-optical recombination elimination layers 16 and 17respectively between the active layer 12 and the reflector 14 and alsobetween the active layer 12 and the reflector 15 in this secondembodiment, crawling up of the crystal defects, originating from Al andtends to occur at the time of crystal growth of the active layer 12, tothe active layer is suppressed effectively, even in the case the upperand lower reflectors 14 and 15 are formed of a semiconductor distributedBragg reflector that includes a semiconductor layer containing Al.Thereby, adversary influence associated with this is also suppressed,and crystal defects caused by Al are reduced. Thus, the active layer 12can be grown with high crystal quality. Furthermore, in view of the factthat the non-optical recombination elimination layers 16 and 17 areformed at the top and bottom of the active region 13 in which injectionof carriers is conducted, the non-optical recombination caused by thecrystal defects originating from Al is also reduced. Thereby, theefficiency of optical emission is improved, and the vertical-cavity,surface-emission-type laser diode can be operated with reliability.Also, the reliability of the device is not failed by the crystaldefects. It is true that insertion the non-optical recombinationelimination layer to only one side of the reflectors, as in the case ofthe first embodiment, is effective. When the non-optical recombinationelimination layer is provided on the reflectors both sides, as in thecase of the second embodiment, the effect is enhanced. Also, a largerefractive index difference is realized in the upper and lowerreflectors 14 and 15 as compared with the case in which all of thelow-refractive index layers of in the semiconductor distributed Braggreflector are formed of Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1).Because of this, a high reflectance is obtained with fewer number ofstacking. Thus, it is possible to obtain the above-mentioned effectwithout increasing the number of stacking in the reflectors and withoutincreasing the total film thickness of the device.

In FIG. 2A, the optical output is taken out from the upper reflector 14.However, it is possible to take out the optical output from the side ofthe substrate 11.

Third Embodiment

In a third embodiment of the present invention, GaAs is used for thesemiconductor substrate 1 or 11 in the vertical-cavity,surface-emission-type laser diode of the above first or secondembodiment. Further, the non-optical recombination elimination layer 6,16 or 17 is formed of a Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1)layer.

It should be noted that the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1)layer is free from Al (Al content with regard to group III elements is1% or less) in the present embodiment and has a bandgap that can belarger than that of GaAs. Thus, by using the non-optical recombinationelimination layers 6, 16 or 17 of Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1,0<y≦1) in combination with an active layer having a bandgap smaller thanthat of GaAs, it become possible to eliminate the leakage of carriers tothe layer containing Al through the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1,0<y≦1) layer. In this way, non-optical recombination is effectively andpositively eliminated.

Fourth Embodiment

In a fourth embodiment of the present invention, the lattice constant ofthe Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer used for thenon-optical recombination elimination layer in the vertical-cavity,surface-emission-type laser diode the third embodiment is set smallerthan the lattice constant of the semiconductor substrate of GaAs.Because of this, the non-optical recombination elimination layer of thepresent embodiment accumulates a tensile strain therein.

In an epitaxial growth process, a crystal layer is grown whilereflecting the information of a foundation on which the epitaxial growis made. Thus, when there is a defect on the substrate surface, thedefect crawls up to the layer grown on the substrate. On the other hand,it is known that such a crawling up of the defect can be suppressed whenthere is provided a strained layer. In the event the defect has reachedthe active layer, the efficiency of optical emission is inevitablyreduced. When the active layer has accumulated a strain therein, thereoccurs a decrease of critical thickness, and there arise problems suchas growth of a layer with necessary thickness is not possible.Especially, the problem of failing to grow a layer due to the existenceof defects arises in the case the compressive strain in the active layeris 2% or more, or in the case of growing a strained layer beyond thecritical film thickness. In such cases, the growth is not possible evenwhen a low-temperature growth process or other non-equilibrium growthprocess is employed. In the present invention, the lattice constant ofthe Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer used for thenon-optical recombination elimination layer is set smaller than thelattice constant of the semiconductor substrate formed of GaAs, andthus, the non-optical recombination elimination layer accumulates atensile strain, and the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layerforming the non-optical recombination elimination layer becomes astrained layer. As a result, the problem of crawling up of defects iseffectively suppressed. Thereby, the efficiency of optical emission isimproved and it becomes possible to grow the active layer even in thecase the active layer accumulates a compressive strain of 2% or more.Further, it becomes possible to grow a strained layer with a thicknessexceeding the critical thickness.

In the present embodiment, the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1,0<y≦1) layer used for the non-optical recombination elimination layermakes contact with the active region and functions also to confine thecarriers in the active region. In the case of aGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer, it should be notedthat the bandgap energy increases with decreasing lattice constant. Inthe case of Ga_(x)In_(1-x)P (y=1), for example, the compositionapproaches to GaP with increasing compositional parameter x. Associatedtherewith, there occurs an increase of lattice constant and also thebandgap energy Eg. It should be noted that the bandgap Eg for directtransition is given as Eg(Γ)=1.351+0.634x+0.786x², while the bandgapenergy for the case of indirect transition is given by Eg(X)=2.24+0.02x.Therefore, the hetero-barrier height formed between the active regionand the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer is increasedand the carrier confinement is improved. As a result of this, effectssuch as decrease of threshold current or improvement of temperaturecharacteristics are obtained.

Fifth Embodiment

In a fifth embodiment of the present invention, the lattice constant ofthe Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer, used for thenon-optical recombination elimination layer in the vertical-cavitysurface-emission type laser diode of the third embodiment, is set to belarger than that of the semiconductor substrate of GaAs. Because ofthis, the non-optical recombination elimination layer accumulates acompressive strain therein. Further, the lattice constant of the activelayer is set larger than the lattice constant of theGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer. Thus, the active layeraccumulates a compressive strain.

As noted previously, growth of an epitaxial layer occurs whilereflecting the information of the foundation on which the epitaxialgrowth is made. Therefore, the defect tends to crawl up to the grownlayer when there is a defect existing on the substrate surface. On theother hand, it is known that the crawling up of defects like this iseffectively suppressed, when there is provided a strained layer. Whenthe above-noted defects have reached the active layer, the efficacy ofoptical emission is degraded inevitably. Meanwhile, there occurs adecrease of critical thickness in the active layer when the active layeraccumulates a strain. Because of this, the problem that growth of theactive layer with necessary thickness is not possible arises, especiallywhen growing the active layer accumulating a compressive strain of 2% ormore or when growing the strained active layer with a thickness largerthan the critical film thickness. In such a case, because of theexistence of defects, the growth is not possible even when alow-temperature growth process or other non-equilibrium growth processesare employed. In the present invention, the lattice constant ofGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer used for thenon-optical recombination elimination layer is set larger than thelattice constant of the semiconductor substrate formed of GaAs. Becauseof this, the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) non-opticalrecombination elimination layer accumulates therein a compressivestrain, and the crawling up of defects noted above is suppressed.Thereby, the efficiency of optical emission is improved. As a result,growth of an active layer accumulating a compressive strain of 2% ormore or growth of the strained active layer beyond the criticalthickness thereof becomes possible.

Furthermore, it should be noted that the strain accumulated in theGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer works with the senseidentical with the sense of the strain accumulated in the active layer.Because of this, the strain accumulated in theGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer works so as to reducethe compressive strain, which the active layer senses. In view of thefact that influence of external factor increases with increasing strain,the construction of the present embodiment is especially effective inthe case the compressive strain of the active layer is large, such as 2%or more, or in the case the thickness of the active layer exceeds thecritical thickness.

The vertical-cavity, surface-emission-type laser diode of 1.3 μm band ispreferably formed on a GaAs substrate. Further, semiconductor multilayerreflector is used frequently for the resonator. Thereby, it is necessaryto grow the semiconductor layers of 50-80 layers before the growth ofthe active layer, so that the thickness becomes 5-8 μm.

In such a case, even when a GaAs substrate of high quality is used, thedefective density at the surface on which the active layer is grown inthe state immediately before the growth of the active layer increasesinevitably over the defective density of the GaAs substrate surface, dueto various reasons. For example, the defect that has once occurredcrawls up in the direction of crystal growth. Also, defects can beformed at a hetero interface. When the actual compressive strain thatthe active layer senses is reduced, or when a strained layer is insertedin the state before the growth of the active layer is started, itbecomes possible to reduce the influence of the defects existing on thesurface ready for growth of the active layer thereon.

Sixth Embodiment

FIGS. 3A and 3B are diagrams (FIG. 3B is an enlarged view of the activeregion of FIG. 3A) showing a constitutional example of avertical-cavity, surface-emission-type laser diode according to a sixthembodiment of the present invention. Also, FIGS. 4A and 4B are thediagrams (FIG. 4B is an enlarged view of the active region of FIG. 4A)showing a second constitutional example of the vertical-cavity,surface-emission-type laser diode of the sixth embodiment of the presentinvention. It should be noted that FIGS. 3A and 3B correspond to thevertical-cavity surface-emission type laser diode of the firstembodiment (FIG. 1), while FIGS. 4A and 4B correspond to thevertical-cavity surface-emission type laser diode of the secondembodiment (FIG. 2).

Referring to FIGS. 3A and 3B and FIGS. 4A and 4B, the vertical-cavity,surface-emission-type laser diode of the sixth embodiment includescurrent confinement layers 8 and 18 formed by selective oxidization of aselectively oxidized layer, formed primarily of AlAs, on the upper partof the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer (designated bythe reference numeral 6 in FIGS. 3A and 3B, designated by the referencenumeral 16 in FIGS. 4A and 4B), used for the non-optical recombinationelimination layer

The GaInPAs system layer including P and used for the non-opticalrecombination elimination layer in the present embodiment functions alsoas an etching stopper layer with respect to the layer of AlGaAs systemthat contains Al and As as primary components. Because of this, theheight of the mesa structure, which is formed for the purpose ofselective oxidation process of the current confinement layer 8 or 18, iscontrolled exactly, in the case the current confinement layer 8 or 18,which is subjected to selective oxidation process and contains Al and Asas primary components, is formed in the upper part of theGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer (represented by thereference numeral 6 in FIG. 3 and by the reference numeral 16 in FIG.4). In this way, the accuracy of control of device fabrication processis improved in the sixth embodiment. Further, the homogeneity andreproducibility of the device characteristic are improved. Further, thefabrication cost is reduced.

Seventh Embodiment

In the seventh embodiment of the present invention, the active layer 2or 12 in any of first through sixth embodiments described before, isformed by any of GaInNAs or GaInAs.

By using GaInNAs or GaInAs in the active layer 2 or 12, it becomespossible to construct a vertical-cavity, surface-emission laser diode ofthe wavelength band of 0.9 μm or longer on a GaAs substrate. In thiscase, the material system of AlGaAs/GaAs can be used and a largerefractive index difference is achieved. Therefore, the total number ofstacks in the semiconductor distributed Bragg reflector is reduced ascompared with the case of forming the laser diode on an InP substrate,while simultaneously realizing a higher reflectance. In view of the factthat a widegap material can be formed to a GaAs substrate, it ispossible in the present embodiment to increase the band discontinuitywith respect to the active layer. As a result, the efficiency of carrierconfinement is improved and a vertical-cavity, surface-emission typelaser diode of long wavelength band is obtained with excellenttemperature characteristics. It should be noted that the semiconductordistributed Bragg reflector forming the lower reflector 5 or 15 or theupper reflector 14 provides a larger refractive index difference ascompared with the case in which all the low-refractive index layers areformed of the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer. Becauseof this, a high reflectance is obtained with fewer number of stacking.Thus, the laser diode of the present embodiment can reduce the crystaldefects originating from and also the non-optical recombination, withoutincreasing the number of stacking of the reflector and the total filmthickness of the device. As a result, the reliability of thevertical-cavity, surface-emission type laser is improved.

Eighth Embodiment

In the eighth embodiment of the present invention, the active layer 2 or12 accumulates a compressive strain of 2.0% or more in any of the firstthrough seventh embodiments.

When a layer is grown on an underlying substrate with a lattice constantdifferent from that of the substrate, the lattice deforms elasticallyand absorbs the energy. When a material having a lattice constantdifferent from the lattice constant of the underlying substrate isgrowth with large thickness, on the other hand, there comes a point inwhich absorption of strain energy by elastic deformation is no longerpossible and a misfit dislocation appears. This film thickness is calledthe critical thickness. It is difficult to produce a good device whenthe misfit dislocation has resulted.

Theoretically, the critical thickness (h_(c)), in which the misfitdislocation appears by a dynamic process, is given by the followingequation proposed by Matthews and Blakeslee (J. Crystal Growth. 27,(1974) pp. 118-125)

$\begin{matrix}{h_{c} = {\frac{b\left( {1 - {v\;\cos^{2}\alpha}} \right)}{8\pi\;{f\left( {1 + v} \right)}\;\cos\;\lambda}\left( {{\ln\left( \frac{h_{c}}{b} \right)} + 1} \right)}} & {{Eq}.\mspace{11mu}(\; 1)}\end{matrix}$wherein ν represents Poisson's ratio (ν=C₁₂/(C₂₁+C₁₂); C₁₂ and C₂₁ beingelastic stiffness constant), α is the angle formed by a Burger's vectorand a line segment of a dislocation line at the interface (cos α=½), λrepresents the angle formed between an intersection line of a slipsurface and the interface and the Burger's vector (cos λ=½), b is givenas b=a/2^(1/2) (a; lattice constant), f represents the degree of latticemismatching and hence strain represented as f=Δa/a, Δa being adifference of lattice constant with respect to the underlying substrate.A compressive strain appears for the case in which the lattice constantof the material grown on the substrate is larger than the latticeconstant of the substrate. On the other hand, a tensile strain appearsin the opposite case. It should be noted that Eq. (1) is derived for thecase in which a single layer film is grown on a substrate of infinitethickness. Hereinafter, the critical thickness hc given by Eq. (1) willbe referred to as critical thickness based on the theory of Matthews andBlakeslee.

FIG. 5 shows the critical film thickness of a GaInAs layer calculated bythe generally accepted theory of Matthews and Blakeslee noted above forthe case in which the GaInAs layer is formed on a GaAs substrate. Itshould be noted that the lattice constant ofGa_(1-x)In_(x)N_(y)As_(1-y), a material system in which nitrogen (N) isadded to Ga_(1-x)In_(x)As, becomes equal to the lattice constant ofGa_(1-x)In_(x)NAs in which the In content x is smaller by 3% (y=x−0.03)for addition of nitrogen of every 1%. In the case of forming a GaInAslayer on the GaAs substrate, increase of In content results in anincrease of strain and the critical film thickness, which is a filmthickness in which a two-dimensional growth is possible, is decreased.As a result of increase of the In content, the oscillation wavelength ofa semiconductor light emission device (a laser diode) changes to longwavelength, in the case a GaInAs layer grown on a GaAs substrate isused. However, there simultaneously occurs an increase strain. Thecritical amount of strain in this case is about 2%. Corresponding tothis, there is a limit in the increase of oscillation wavelength and itwas said the wavelength of 1.1 μm would be the limit. Reference shouldbe made to IEEE Photonics Technol. Lett. Vol. 9 (1197), pp. 1319-1321.

However, in practice, it is possible to form a material layer with Incontent of 30% or more, in other words, a material that accumulates astrain of 2% or more, in a GaInAs quantum well layer formed on a GaAssubstrate, to a thickness exceeding the critical film thickness hc ofMatthews and Blakeslee by using a non-equilibrium growth process such asMOCVD process or MBE process under a strongly non-equilibrium conductionsuch as lower temperature process conducted at about 600° C. or less. Bydoing so, the actual critical thickness (hc′) exceeds the criticalthickness of Matthews and Blakeslee, and it becomes possible grow ahighly strained GaInAs quantum-well active layer having the strain of 2%with a thickness larger than the thickness conventionally possible.Because of this, a laser oscillation in the long wavelength bandexceeding 1.2 μm is obtained. Laser oscillation in such long wavelengthband has not been possible in conventional laser diodes and othersemiconductor light emission devices. It should be noted that a Sisemiconductor substrate is transparent with respect to this wavelength.In this way, it becomes possible to achieve optical transmission throughthe Si substrate in a circuit chip in which electron devices and opticaldevices are integrated on the Si substrate. Further, highly efficientHEMT (High electron mobility transistor) can be obtained.

FIG. 5 also represents experimental results.

Referring to FIG. 5, in the case the In content is 32% and the thicknessis 8.6 nm, it can be seen that PL (photoluminescence) central wavelengthis 1.13 μm. In the case the In content is 36% and the thickness is 7.8nm, the PL central wavelength is 1.16 μm. Also, in the case the Incontent is 39% and the thickness is 7.2 nm, it can be seen that the PLcentral wavelength is 1.2 μm. In these cases, the critical thicknessh_(c) calculated on the basis of theory of Matthews and Blakeslee Eq.(1) is exceeded.

Further, FIG. 6 shows the relationship between the PL central wavelengthand PL intensity for a GaInAs single quantum well layer, wherein the Incontent x of the GaInAs well layer (represented by continuous line partthe drawing) is set to 31-42%. Further, the thickness of the well layeris decreased to 9-6 nm simultaneously with the increase of the Incontent x. A strong PL intensity was obtained for the quantum well layerup to the wavelength of about 1.2 μm. It can be seen that the PLintensity decreases gradually up to the wavelength of 1.2 μm, while whenthe wavelength of 1.2 μm is exceeded, the PL intensity starts to falloff sharply. This corresponds to the flatness of the layer surface. Morespecifically, a mirror surface was obtained up to the wavelength of 1.2μm. From these results, it is interpreted that the above kind of sharpdecline of PL intensity is resulted because the thickness of the quantumwell layer has exceeded the critical thickness h_(c)′ substantially. Inthe case that a layer is grown with high growth rate by a strongnon-equilibrium growth process such as MOCVD process or MBE processconducted at a low temperature, it is reported that there occurs anincrease in experimentally obtained critical thickness. Further, thereis a report that there occurs a three-dimensional growth, and henceroughening of surface, even when the layer thickness is smaller than thecritical thickness based on the theory, depending on the growthcondition (as in the case of high-temperature growth). Therefore, it isunderstood that the foregoing result reflects the situation in which theactual critical film thickness h_(c)′ realized in the case ofnon-equilibrium growth at low-temperature exceeds the critical thicknessh_(c) based on the theory, and because of this, it was possible to growa two-dimensional thick film without causing misfit dislocations.

In the case of the GaInNAs active layer, increase of strain means thatit is necessary to increase the In content for obtaining the samewavelength, and because of this, it is possible to reduce the nitrogenconcentration. FIG. 7 shows the relationship between the thresholdcurrent density and nitrogen content for a GaInNAs laser diode(edge-emission type) for the case of the In content of 10%. From FIG. 7,it can be seen that the threshold current density increases sharply withincrease of the nitrogen content. The reason of this is attributed todegradation of crystal quality of the GaInNAs layer caused with theincrease of the nitrogen content.

FIG. 8 shows the relationship between the oscillation wavelength and thethreshold current density for the GaInAs/GaAs-MQW laser diode of thepresent invention having a strong compressive strain. The oscillationwavelength of a GaInAs/GaAs laser diode reported since before was about1.1 μm. According to the experimental results by the inventor of thepresent invention, it was confirmed that operation up to the wavelengthof 1.225 μm is possible at room temperature. Moreover, it can be seenthat a low threshold is realized up to the wavelength of about 1.2 μm.It should be noted that these results reflect the PL characteristicsshown in FIG. 6. In the case nitrogen is added to the highly strainedGaInAs quantum well layer oscillating at about 1.2 μm in thenitrogen-free state, to obtain the wavelength of 1.3 μm, an amount of0.5% of nitrogen is sufficient. It should be noted that about 3% ofnitrogen had to be added in the case of the lattice-matched thick activelayer of FIG. 7 in which the In content is 10%. Accordingly, it will beunderstood that the necessary amount of added nitrogen is reducedsubstantially. Associated therewith, the degradation of crystal qualityis suppressed, and a highly efficient laser diode of the 1.3 μm band isrealized. Thus, according to the present invention, the nitrogen contentcan be reduced and the crystal quality is improved. As a result, thecharacteristic of the GaInNAs laser diode is improved substantially.

Also, a vertical-cavity surface-emission-type laser diode of the 1.3 μmband is realized on a GaAs substrate by using a highly strained GaAsSbactive layer.

Conventionally, there was no material suited for a laser diode of1.1-1.3 μm wavelength bands. According to the present invention, thisbecomes possible by using a highly strained GaInAs, GaInNAs or GaAsSbhaving a strain of 2.0% or more. By using GaInNAs, especially, a furtherlonger wavelength becomes possible.

It should be noted that such highly strained materials are extremelysensitive and are easily influenced by the strain of other layers, whichmay not cause a problem in the case of active layers of smaller strain,when the highly strained active layer is applied to a vertical-cavitysurface-emission-type laser diode consisting of a plural layers.However, it becomes possible to eliminate this adversary influence byinterposing the Ga_(x)In_(1-x)As_(y)P_(1-y) (0<x≦1, 0<y≦1) non-opticalrecombination elimination layer. For example, theGa_(x)In_(1-x)As_(y)P_(1-y) (0<x≦1, 0<y≦1) layer is capable of adjustingthe strain thereof by adjusting the composition thereof. Because ofthis, the above kind of adversary influence can be corrected byinterposing the layer between the reflector and the active layer.Further, Al is very reactive and tends to become the cause of defects.On the other hand, it is said that the problem of crawling up of thedefects from a foundation side (substrate) can be blocked when a layercontaining In is provided. Accordingly, the present invention eliminatesthis problem by providing such a layer between the reflector containingAl and the active layer.

Ninth Embodiment

A ninth embodiment of the present invention provides a vertical-cavity,surface-emission-type laser-diode array by arranging a plurality ofvertical-cavity, surface-emission-type laser diodes of the sixthembodiment.

In the case that an array is formed by using the vertical-cavity,surface-emission-type laser diode, in-plane homogeneity influences thedevice-to-device variation of characteristics. In view of the fact thatAlGaAs system can be used as an/the etching stopper for a GaInPAssystem, the height of the mesa structure formed for selective oxidationprocess is controlled exactly over the devices in the array. As aresult, the accuracy of process control at the time of devicefabrication is improved, and homogeneity and reproducibility of thedevice characteristic are improved over the devices forming the array.

Tenth Embodiment

In a tenth embodiment of the present invention, an optical transmissionmodule is provided that uses a vertical-cavity, surface-emission-typelaser diode of any of first through ninth embodiments as a light source.

In the tenth embodiment, a low-cost, highly quality and reliably opticaltransmission module is realized by using low-cost, high-quality andreliable vertical-cavity, surface-emission-type laser diode.

Eleventh Embodiment

In an eleventh embodiment of the present invention, an opticaltransceiver module is provided that uses a vertical-cavity,surface-emission-type laser diodes of any of first through ninthembodiments as a light source.

In the eleventh embodiment, a low-cost, high-quality and reliableoptical transceiver module is realized by using the low-cost,high-quality and reliable vertical-cavity, surface-emission-type laserdiode of any of first through ninth embodiments.

Twelfth Embodiment

In a twelfth embodiment of the present invention, an opticaltelecommunication system is provided that uses a vertical-cavity,surface-emission-type laser diode of any of first through ninthembodiments as a light source.

In the twelfth embodiment, low-cost, high-quality and reliableoptical-fiber telecommunication system, optical interconnection system,and other optical telecommunication systems are realized by using alow-cost, high-quality and reliable vertical-cavity,surface-emission-type laser diode of any first through ninthembodiments.

Thirteenth Embodiment

In a thirteenth embodiment of the present invention, a fabricationprocess of vertical-cavity, surface-emission-type laser diodes of firstthrough sixth embodiment will be provided for the case in which theactive layers 2 and 12 are formed with a semiconductor layer containingnitrogen. In the process of the present embodiment, a process ofremoving Al source material, Al product, Al compound or Al remainingfrom a site, such as the gas supply line or the growth chamber in whichthe nitrogen source compound or the impurity contained in the nitrogensource compound may make a contact, is provided after the growth of thesemiconductor layer that contains Al but before the start of growth ofthe growth of the active layer containing therein nitrogen.

It turned out that this invention has an effect especially in the caseof the active layer 2 or 12 is an active layer containing nitrogen suchas GaNAs, GaPN, GaNPAs, GaInNAs, GaInNP, GaNAsSb, or GaInNAsSb.

FIG. 13 is a diagram showing the room temperature photoluminescencespectrum of the active layer having the GaInNAs/GaAs double quantum wellstructure that consists of a GaInNAs quantum well layer and a GaAsbarrier layer and produced by an MOCVD apparatus of the inventor of thepresent invention. In FIG. 13, the curve A represents the spectrum forthe specimen in which the double-quantum well structure is formed on anAlGaAs cladding layer with a GaAs intermediate layer interveningtherebetween. On the other hand, the curve B represents the spectrum forthe specimen in which a double quantum well structure is formedcontinuously on a GaInP cladding layer with an intervening GaAsintermediate layer. FIG. 14, on the other hand, shows the fundamentalstructure of the specimens A and B. Referring to FIG. 14, the specimensA and B are basically formed on a GaAs substrate 501 by laminating alower cladding layer 502, an intermediate layer 503, an active layer 504containing nitrogen, an intermediate 503, and an upper cladding layer505.

As represented in FIG. 13, the intensity of photoluminescence spectrumfalls off more than one-half in the specimen A as compared with thespecimen B. Thus, there has been a problem in that the emissionintensity the active layer is degraded when the active layer of GaInNAscontaining nitrogen is formed continuously on the semiconductor layer ofAlGaAs that contains Al as a constituent element while using a singleMOCVD apparatus. As a result, the threshold current density of the laserdiode of the GaInNAs system formed on the AlGaAs cladding layer becomemore than twice as compared with case in which the laser diode is formedon the GaInP cladding layer.

The inventor of the present invention conducted investigation about thisproblem. FIG. 15 shows the depth-distribution profile of nitrogen (N)and oxygen (O) in an exemplary laser diode of FIG. 14 that uses AlGaAsfor the cladding layer 502, GaAs for the intermediate layer 503 andGaInNAs/GaAs double quantum well structure for the active layer 504,while using a single epitaxial growth (MOCVD) apparatus. The measurementwas made by secondary ion mass spectroscopy. The measurement conditionis shown in Table 1.

TABLE 1 primary ion specie Cs⁺ primary acceleration voltage 3.0 kVsputtering rate 0.5 nm/s measurement area 160 × 256 μm² degree of vacuum<3E−7 Pa polarity of measured ions −

In FIG. 15, there can be seen two nitrogen peaks in the active layer 504in correspondence to the GaInNAs/GaAs double quantum well structure.Further, a peak of oxygen is detected in the active layer 504. However,it can be seen that the oxygen concentration in the intermediate layer503 that does not contain Al is about one order lower than the oxygenconcentration of the active layer 504.

On the other hand, in the case the depth-distribution profile of theoxygen concentration was measured for the laser diode device that usesGaInP for the cladding layer 502, GaAs for the intermediate layer 503,and GaInNAs/GaAs double quantum well structure for the active layer 504,it was confirmed that the oxygen concentration in active layer 504background level.

In other words, it became clear by the experiment of the inventor thatoxygen is taken into the active layer 504 that contains nitrogen, whenthe laser diode is grown continuously by a single epitaxial growthapparatus while using a nitrogen compound source material and ametal-organic Al source material continuously such that the laser diodehas the semiconductor layer 502 containing Al between the substrate 501and the active layer 504 that contains nitrogen. Oxygen thus taken intothe active layer 504 forms a non-optical recombination state, andbecause of this, the efficacy of optical emission of the active layer504 is decreased substantially. Further, it became clear that oxygenthus taken into the active layer 504 becomes the cause of decrease ofthe efficacy of a laser diode for the case the laser diode includes thesemiconductor layer 502 containing Al between the active layer 504 andthe substrate 501. It is thought that origin of the oxygen contaminationwould be the material containing oxygen and remaining in the apparatusor a material containing oxygen and included as impurity in the nitrogencompound source material.

Next, an investigation was made about the cause the oxygenincorporation. FIG. 16 shows the depth distribution profile of in thesame sample as FIG. 15. It should be noted that the measurement was madeby secondary ion mass spectroscopy under the condition represented inTable 2.

TABLE 2 primary ion specie O2+ primary acceleration voltage 5.5 kVsputtering rate 0.3 nm/s measurement region 60 μmΦ degree of vacuum<3E−7 Pa polarity of measured ion +

From FIG. 16, it will be understood that Al is detected in the activelayer 504 in which no Al source material is used. On the other hand, inthe intermediate layer (GaAs layer) 503 adjacent to the semiconductorlayer (the cladding layer) 502 or 505 containing Al, it will be notedthe Al concentration level is lower than the Al concentration of theactive layer 504 by one order or more. This indicates that the Alcontamination in the active layer 504 is not caused by diffusion andsubstitution of Al from the semiconductor layer (cladding layer) 502 or505 that contains Al.

On the other hand, no Al was detected in the active layer in the casethe active layer containing nitrogen is grown on the semiconductor layernot containing Al, such as GaInP.

Thus, it is concluded that Al detected in the active layer 504 asrepresented in FIG. 16 originates either from Al remaining in the gassupply line or growth chamber, or from Al source, Al product, Alcompound or Al, taken into the active layer 504 by combining with anitrogen source compound or with the impurity (water) contained in sucha nitrogen source compound. In other words, it was newly discovered bythe inventor that Al is taken naturally into the active layer containingnitrogen, when a laser diode that includes a semiconductor layercontaining Al between the substrate and the active layer containingnitrogen continuously in a single epitaxial growth apparatus while usinga nitrogen source compound and a metal-organic Al source material.

When comparison is made with respect to the depth distribution profileof nitrogen and oxygen concentration in a laser diode having aconstruction identical with that of FIG. 15, it will be noted that thetwo oxygen peak profiles in the double quantum-well active layer 504 donot correspond with the peak profile of nitrogen but correspond to theAl concentration profile of FIG. 16. From this, it became clear that theoxygen impurity in the GaInNAs well layer is not incorporated togetherwith the nitrogen source compound but is incorporated into the welllayer in the form coupled with Al. In other words, Al causes couplingwith a material containing oxygen such as water contained in thenitrogen compound source or water remaining in the gas line or reactionchamber, as the Al source material, Al product or Al compound or Alremaining in the processing chamber causes contact with a nitrogensource compound. In this way, Al and oxygen are taken into the activelayer 504. It was this oxygen that was taken into active layer 504 inthis way that has caused decrease of efficacy of optical emission in theactive layer 504. The above became clear for the first time by theexperiments of the inventor of the present invention.

Thus, in order to eliminate this problem, it is necessary to provide aprocess for removing the Al source material, Al product, Al compound orAl remaining in the processing chamber or a site where there is a chancethat these Al-containing material makes a contact with impurity in thenitrogen source compound.

By providing such a process after the growth of the semiconductor layer502 that contains Al but before the start of growth of the active layer504, which contains nitrogen, the concentration of the impurity thatcontains Al and oxygen and incorporated into the active layer throughthe mechanism of the nitrogen source compound or impurity contained inthe nitrogen source compound causing a reaction with the residual Alsource material, Al product, Al compound or Al, is reduced effectively.Further, the adversary influence on the non-optical recombination inactive layer 504 is successfully reduced even when the carriers areinjected in the active layer 504 by current injection, provided that theresidual Al is removed before the end of the growth process of thenon-optical recombination elimination layer.

For example, a room temperature continuous oscillation became possibleby reducing the Al concentration in the active layer 504 containingnitrogen, to the level of 1×10¹⁹ cm⁻³ or less. Furthermore, an opticalemission characteristic equivalent to the one for the case in which theactive layer is formed on a semiconductor layer not containing Al isobtained by reducing the Al concentration in the active layer 504containing nitrogen to 2×10¹⁸ cm⁻³ or less.

Table 3 shows the result of evaluation of threshold current density fora broad stripe laser diode having a GaInNAs double quantum wellstructure (layer containing nitrogen) and a cladding layer (layercontaining Al) of AlGaAs.

TABLE 3 Al in active O in active threshold current cladding layer layer[/cm3] layer [/cm3] density [kA/cm2] AlGaAs >2E+19 >1E+18 >10 AlGaAs8-9E+18   9E+17 2-3 AlGaAs <1E+18 <2E+17 0.8 GaInP <2E+17 <2E+17 0.8

From Table 3 it can be seen that Al of 2×10¹⁹ cm⁻³ or more and oxygen of1×10¹⁸ cm⁻³ or more are incorporated into the active layer in thestructure, in which an active layer containing nitrogen is growncontinuously on a semiconductor layer that contains Al. Thus, thethreshold current density takes a remarkably high value of 10 kA/cm² ormore. However, the oxygen concentration in the active layer is reducedto 1×10¹⁸ cm⁻³ or less when the Al concentration in the active layer isreduced to 1×10¹⁹ cm⁻³ or less. Along with this, the broad stripe laserdiode can oscillate at the threshold current density of 2-3 kA/cm. Whenthe active layer has a crystal quality characterized by the thresholdcurrent density of several kiloamperes/cm² or less, room temperaturecontinuous oscillation of the broad stripe laser diode becomes possible.Accordingly, it is concluded that by controlling the Al concentration inthe active layer containing nitrogen to be 1×10¹⁹ cm⁻³ or less, itbecomes possible to produce a laser diode that can oscillatecontinuously at room temperature.

Thus, in the thirteenth embodiment of the present invention, oxygentaken into the active layer that contains nitrogen at the time of growthof the active layer is reduced successfully, by providing the process ofremoving residual Al source material, Al product, Al compound or Al fromthe site, such as gas supply line or growth chamber, in which thenitrogen source compound or impurity contained therein may make acontact, after the growth of the semiconductor layer containing Al butbefore the start of growth of the active layer. As a result, it becomespossible to grow a semiconductor light-emitting device having an activelayer containing nitrogen formed on or above a semiconductor layercontaining Al, without reducing the efficacy of optical emission.

Fourteenth Embodiment

In a fourteenth embodiment of the present invention, a process forpurging a carrier gas is provided in the fabrication process of avertical-cavity, surface-emission-type laser diode of the thirteenthembodiment after the growth of the semiconductor layer containing Al butbefore the end of the growth process of the non-optical recombinationelimination layer, for removing residual Al source material, Al product,Al compound or Al from a site, such as gas supply line or growthchamber, in which a nitrogen source compound or impurity containedtherein may make a contact.

Thus, according to the fourteenth embodiment, there is provided apurging process, after the process of growing the semiconductor layer502 containing Al but before the start of growth of the active layer 504containing nitrogen, for purging the residual Al source material, Alproduct, Al compound or Al from a site in which the nitrogen compoundsource material or impurity contained therein may make a contact, byusing a carrier gas.

Here, the time of the purging process is defined as a time intervalafter interruption of supply of the Al source material to the growthchamber with the termination of growth of the semiconductor layer 502containing Al but before starting supply of the nitrogen source compoundfor commencing the growth of the active layer 504 that containsnitrogen.

As noted previously, the Al source material, Al product, Al compound orAl may remain in the growth chamber, when a semiconductor layercontaining Al as constituent element. However, it is possible todecrease the concentration of residual Al gradually remaining in thegrowth chamber, by purging the gas line and the growth chamber with thecarrier gas.

Specifically, the Al concentration in the active layer can be reduced to1×10¹⁹ cm⁻³ or less with the purging process of about 10 minutes. Thus,the efficacy of optical emission in the active layer is improved and itbecomes possible to construct a laser diode device that oscillatescontinuously at room temperature.

By providing the purging process over 30 minutes or more, it is possibleto decrease the Al concentration level to 1×10¹⁸ cm⁻³ or less.

As a purging method, there is a process to interrupt the growth of theintermediate layer that does not contain Al and carry out the purgingwith the carrier gas. In the case that process of interrupt growth andpurge is to be used, such an interruption of growth can be providedafter the growth of the semiconductor layer containing Al up to midwayof growth of the non-optical recombination elimination layer.

FIG. 17 shows an example of the laser diode according to the fourteenthembodiment of the present invention. The laser diode of FIG. 17 isformed on the substrate 501 by consecutively laminating thereon thesemiconductor layer 502 containing Al as a constituent element, a firstlower intermediate layer 601, a second 2nd lower intermediate layer 602,an active layer 504 containing nitrogen, the upper intermediate layer503 and, the second semiconductor layer 505.

In the crystal growth of the laser diode of FIG. 17, an epitaxial growthapparatus that uses a metal-organic Al source material and an organicnitrogen source material is used. Thereby, a growth interruption processis provided after the growth of the first lower intermediate layer 601but before the start of growth of the second lower intermediate layer602. During the growth interruption process, the Al source material, Alproduct, Al compound or Al remaining in the site where the nitrogensource compound or the impurity contained in the nitrogen sourcecompound in the growth chamber may make a contact is removed by purgingwith hydrogen that is used for a carrier gas.

FIG. 18 shows the result of measurement of depth distribution of Al tothe laser diode device for the case the growth interruption is providedbetween the first lower intermediate layer 601 and the second lowerintermediate layer 602 for a duration of 60 minutes. As can be seen inFIG. 18, the Al concentration in the active layer 504 can be reduced tothe level of 3×10¹⁷ cm⁻³ or less. This value of Al concentration isgenerally the same as the Al concentration in the intermediate layer.

FIG. 19 shows the result of measurement of the depth distributionprofile of nitrogen (N) and oxygen (O) for the same device as the deviceof FIG. 18. As shown in FIG. 19, the oxygen concentration in activelayer 504 was reduced the background level of 1×10¹⁷ cm⁻³.

It should be noted that the oxygen peak appearing in the lowerintermediate layers 601 and 602 is caused by segregation of oxygen tothe interface in which the growth was interrupted. Therefore, it ispreferable to provide such a growth interruption after the growth of thesemiconductor layer containing Al and before the end of the growthprocess of the non-optical recombination elimination layer. This isbecause the non-optical recombination elimination layer can have anincreased bandgap energy as compared with the quantum-well active layeror the barrier layer and that it is because the adversary effect ofnon-optical recombination caused by oxygen that segregated to the growthinterruption interface is suppressed when the carriers are injected tothe active layer by current injection.

In the illustrated example, growth of the laser diode is interruptedbetween the first lower intermediate layer 601 and the second lowerintermediate layer 602. By conducting the purging process for 60minutes, impurity concentration level of Al, oxygen, and the like, inthe active layer 504 containing nitrogen was reduced. With this, theefficacy of optical emission of the active layer 504 containing nitrogenwas improved.

During the purging process of the growth chamber conducted with thecarrier gas, the efficiency of removing the Al source material orreaction product adsorbed on a susceptor or periphery of the susceptoris improved by conducting the purging process while heating thesusceptor.

When the substrate is heated simultaneously, it should be noted that thegroup V source gas such as AsH₃ or PH₃ has to be supplied continuouslyto the growth chamber during the growth interruption so as to preventthat the outermost surface of the semiconductor layer 505 experiencesthermal decomposition.

When purging the growth chamber with the carrier gas, it is alsopossible to move the substrate to another chamber from the growthchamber. In this case in which the substrate is moved to another chamberfrom the growth chamber, it is not necessary to supply the group Vsource gas of AsH₃ or PH₃ to the growth chamber during the process ofpurging conducted while heating the susceptor. Accordingly, thermaldecomposing of the reaction product of Al deposited on the susceptor orperiphery of the susceptor is facilitated, and the Al concentrationinside the growth chamber is reduced effectively.

Further, it is also possible to carry out the purging during the growthprocess of the intermediate layer. Because of the fact that thenon-optical recombination elimination layer is provided between thereflector of the AlGaAs system, which contains Al, and the active layercontaining nitrogen, the distance between the active layer containingnitrogen and the layer containing Al is increased. Because of this,there is a merit that the duration of purging can be increased when thepurging process is conducted simultaneously to the growing process. Inthis case, it is preferable to reduce the growth rate for securingsufficient purge time.

Fifteenth Embodiment

In a fifteenth embodiment of the present invention, the vertical-cavity,surface-emission-type laser diodes of the thirteenth and fourteenthembodiments are formed by a crystal growth process that uses an MOCVDprocess while using at least a metal-organic Al source material and anitrogen source compound.

In a semiconductor light-emitting device having a semiconductor layercontaining Al between a substrate and an active layer that containsnitrogen, no remarkable decrease of efficacy of optical emission isreported when the semiconductor device is produced it with a crystalgrowth process that does not use a metal-organic-metal Al sourcematerial and a nitrogen source compound such as an MBE process. In thecase an MOCVD process is used, on the other hand, decrease of efficacyof optical emission is reported for a GaInNAs active layer formed on asemiconductor layer containing Al. According to the article in ElectronLett., 2000, 36 (21), pp 1776-1777, it is reported that the intensity ofphotoluminescence decreases remarkably when a GaInNAs quantum well layeris grown continuously on an AlGaAs cladding layer in the same MOCVDgrowth chamber, even in the case an intermediate layer of GaAs with isprovided. In the above report, therefore, the AlGaAs cladding layer andthe GaInNAs active layer are grown in different MOCVD growth apparatusesfor improving the photoluminescent intensity. Accordingly, this problemis thought to be a problem that cannot be avoided in the case ofconducting a crystal growth process while using a metal-organic sourceof Al and nitrogen source compound, as in the case of MOCVD process.

In an MBE process, the crystal growth is carried out in a highly vacuumenvironment. Contrary to this, an MOCVD process is conducted under aprocess pressure much higher than the process pressure of an MBE processof several ten Torr to atmospheric pressure. Because of this, the meanfree path of the gas molecules is overwhelmingly short in the MOCVDprocess. Thus, there are many opportunities that the supplied sourcematerial molecules and the carrier gas molecules cause contact andreaction with the gas line, reaction chamber or other parts. This is thereason why it is preferable to provide the process for removing theresidual Al source material, Al product, Al compound, or Al, in the caseof a process such as MOCVD process that uses a high pressure for thegrowth chamber or for the gas line, from the site in which the nitrogensource compound or impurity contained in the nitrogen source compoundmay cause a contact, after the growth of the semiconductor layercontaining Al before the growth of the active layer containing nitrogen(more preferably before the end of the growth process of the non-opticalrecombination elimination layer). By doing so, the effect of reducingthe amount of oxygen taken into the active layer containing nitrogen isincreased.

EXAMPLES

Below, explanation will be made on various examples of the presentinvention.

Example 1

FIGS. 9A and 9 b show the constitutional example of a vertical-cavity,surface-emission-type laser diode of Example 1, wherein FIG. 9B shows anenlarged view of an active region of FIG. 9A. The vertical-cavity,surface-emission-type laser diode of FIGS. 9A and 9 b are formed on ann-GaAs substrate 101 having a (100) surface orientation and includes ann-semiconductor distributed Bragg reflector (AlAs/GaAs lower reflectors)104 formed on the substrate 101, wherein the n-semiconductor distributedBragg reflector includes alternate repetition of an n-Al_(x)Ga_(1-x)As(x=1.0) and an n-Al_(y)Ga_(1-y)As (y=0) repeated for 35 times, withrespective thicknesses of ¼ times the oscillation wavelength λ (λ/4thickness) in the respective media. Further, ann-Ga_(x)In_(1-x)P_(y)As_(1-y) (x=0.5, y=1) layer (a non-opticalrecombination elimination layer) 103 is laminated at the top with thethickness of λ/4. In the Example 1, it should be noted that then-Ga_(x)In_(1-x)P_(y)As_(1-y) (x=0.5, y=1) layer 103 is a low-refractiveindex layer and forms a part of the lower reflector 104.

On the non-optical recombination elimination layer 103, a lower undopedGaAs spacer layer 105, a multiple quantum-well active layer 106 formedof three Ga_(x)In_(1-x)As quantum well layers (quantum-well activelayer) 106 a and corresponding GaAs barrier layers 106 b (thickness of20 nm), and an upper GaAs spacer layer 107 are laminated. In this way,an optical cavity having a thickness corresponding to one wavelength(thickness of λ) of the oscillation wavelength measured in the medium isformed.

Further, a periodical structure (1 period) is formed thereon bylaminating a C-doped p-Ga_(x)In_(1-x)P_(y)As_(1-y) (x=0.5, y=1) layer(non-optical recombination elimination layer) 108 and a Zn-dopedp-Al_(x)Ga_(1-x)As (x=0) layer alternately with a ¼ thickness of theoscillation wavelength as measured in respective media. Further, asemiconductor distributed Bragg reflector (Al_(0.9)Ga_(0.1)As/GaAs upperreflector) 109 is formed thereon by alternate deposition of a C-dopedp-Al_(x)Ga_(1-x)As (x=0.9) layer and a Zn-doped p-Al_(x)Ga_(1-x)As (x=0)layer to form a periodical structure (25 periods) with the thickness of¼ times the oscillation wavelength in each of the media. In the Example1, it should be noted that the p-Ga_(x)In_(1-x)P (x=0.5, y=1) layer 108is a low-refractive index layer and forms a part of the upper reflector109.

It should be noted that the uppermost p-Al_(x)Ga_(1-x)As (x=0) layer 110has a role also of a contact layer (the p-contact layer) contacting witha p-side electrode 112.

Here, it should be noted that the In content x of the quantum-wellactive layer 106 a is set to 39% (Ga_(0.61)In_(0.39)As). Further, thethickness of the quantum-well active layer 106 a is set to 7 nm. Thequantum-well active layer 106 a accumulated a compressive strain ofabout 2.8% with respect to the GaAs substrate 101.

In the Example 1, the growth of the entire vertical-cavity,surface-emission-type laser diode is conducted by an MOCVD process. Inthis case, lattice relaxation was not observed. TMA (trimethylaluminum), TMG (trimethyl gallium), TMI (trimethyl indium), AsH₃(arsine) and PH₃ (phosphine) are used for the source materials of thelayers that constitute the laser diode. Further, H₂ is used for thecarrier gas. In the case the strain in the active layer (quantum-wellactive layer) 106 a is large as in the present case of the Example 1, itis preferable to use a low-temperature growth process that proceedsunder a non-equilibrium state. In Example 1, the GaInAs layer(quantum-well active layer) 106 a is grown at 550° C. It should be notedthat an MOCVD process is suited for crystal growth of highly strainedactive layer due to large the degree of saturation. Further, an MOCVDprocess is advantageous in the point that it does not require highvacuum environment as in the case of an MBE process. Further, an MOCVDprocess is advantageous for mass production in view of the fact that theprocess is easily controlled by controlling flow rate and supply time ofsource gases.

In Example 1, a current confinement structure is formed also by formingan insulation layer (high-resistance region) 111 outside the currentpath by irradiating of proton (H⁺).

Further, a p-side electrode 112 is formed on the p-contact layer 110forming a part of the upper reflector in Example 1 as an uppermost oflayer, except for an optical beam exit region 114. Also, an n-sideelectrode 113 is formed on the back surface of the substrate.

In Example 1, it should be noted that the active region sandwichedbetween the upper and lower reflectors 104 and 109 and causingrecombination of the carriers injected thereto (resonator formed of theupper and lower spacer layers 105 and 107 and the multiple quantum-wellactive layer 106 in Example 1), do not use a material containing Al (theproportion of Al with regard to the group III element is 1% or more).Furthermore, the layers 103 and 108 in the lower reflector 104 and theupper reflector 109 located closest to the active layer 106 have acomposition of Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1). It should benoted that the carriers are confined between the low-refractive indexlayers of the upper reflector 109 and the lower reflector 104 having awidegap and located closest to the active layer 106. Because of this,when the low-refractive index layer (wide gap layer) of the reflectorthat contacts with the active region contained Al, there would occurnon-optical recombination of carriers at the interface with injection ofcarriers, even in the case the active region is formed of a layer notcontaining Al (the proportion of Al with respect to other the group IIIelements is 1% or less). As a result, the efficacy has of opticalemission would fall off inevitably. In view of the object of the presentinvention, it is preferable to form the active region by layers notcontaining Al.

In Example 1, it should be noted that the active region and theinterface between the active region and the reflectors 104 and 109 donot contain Al. Because of this, the problem of non-opticalrecombination of carriers caused by crystal defects, which in turnoriginate from Al, at the time of the carrier injection is eliminated.As a result, non-optical recombination is successfully reduced.

It is naturally preferable to apply the construction that does notcontain Al at the interface between the reflector and the active regionas in the case of Example 1 to both of the upper and lower reflectors104 and 109. However, the effect is obtained when using the constructionin only one of the reflectors. In Example 1, the semiconductordistributed Bragg reflector is used in both of the upper and lowerreflectors 104 and 109. However, it is also possible to form only one ofthe reflectors by the semiconductor distributed Bragg reflector and formthe other reflector by a dielectric reflector. In the abovementionedexample, it is further noted that only the layer in the low-refractiveindex layers forming the reflectors 104 and 109 and located nearest tothe active layer 106 has the composition of Ga_(x)In_(1-x)P_(y)As_(1-y)(0<x≦1, 0<y≦1). However, plural Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1,0<y≦1) layers may be used in the reflectors 104 and 109.

In Example 1, the present invention is applied to the lower reflector104 between the GaAs substrate 101 and the active layer 106. Because ofthis, problem of crawling up of the crystal defects caused by Al to theactive layer 106, which appears at the time of growth of the activelayer 106, and the adversary effects associated therewith aresuppressed. As a result, the crystal quality of the active layer 106 isimproved and the efficacy of optical emission is improved also. Thereby,a sufficient reliability for practical use is obtained. In view of factthat the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer not containingAl is used not in the entire low-refractive index layers constitutingthe semiconductor distributed Bragg reflector but at least in the partlocated close to the active region. Because of this, it is possible toachieve the above-mentioned effect without increasing the number ofstacking in the reflector.

The vertical-cavity, surface-emission-type laser diode thus fabricatedoscillates at the wavelength of was about 1.2 μm. In a GaInAs layerformed on a GaAs substrate, there occurs increase of wavelength as aresult of increase of the In content. However, such an increase of Incontent is accompanied with increase of strain. Thus, it has beenthought that the wavelength of 1.1 μm would be the upper limit.Reference should be made to IEEE Photonics Technol. Lett. Vol. 9 (1997),pp. 1319-1321. In the present invention, it becomes possible to grow theGaInAs quantum-well active layer accumulating a large strain coherentlywith a thickness not possible hitherto, by using a highlynon-equilibrium process such as a low-temperature growth processconducted at 600° C. or less. As a result, a wavelength of 1.2 μm isrealized. It should be noted that a Si semiconductor substrate istransparent at this wavelength. Thus, it becomes possible to achieveoptical transmission through the Si substrate in a circuit chip in whichan electron device and an optical device are integrated on a common Sisubstrate. Thus, it becomes possible to construct a vertical-cavity,surface-emission-type laser diode of long wavelength band on a GaAssubstrate by using a GaInAs layer having a large In content andassociated large compressive strain for the active layer.

While the vertical-cavity, surface-emission-type laser diode of FIG. 9can be grown by an MOCVD process, the same can be grown also by an MBEprocess. In Example 1, the example of triple quantum well structure(TQW) was shown as the layered structure of the active layer 106.However, I is also possible to use a structure (SQW, MQW) in which thenumber of the wells used the quantum well is different. Further, thelaser diode may have a different structure. While the resonator inExample 1 has a thickness of λ, it is also possible to use the thicknessof integer multiple of λ/2, preferably an integer multiple of λ. InExample 1, GaAs was used for the semiconductor substrate 101. However,the present invention is applicable also to the case in which othersemiconductor substrate such as InP is used. Further, the repetitionperiod of the reflectors 104 and 109 may be changed to other repetitionperiod.

In example 1, GaInAs was used for the active layer 106. However, GaInNAscan be used in place thereof. In this case, the vertical-cavity,surface-emission-type laser diode of longer wavelength of 1.3 μm band or1.55 μm band or longer becomes possible by changing the composition ofthe GaInNAs active layer. Also, the vertical-cavity,surface-emission-type laser diode of the 1.3 μm band can be realized onthe GaAs substrate 101 by using GaAsSb for the active layer 106.Conventionally, there has been no material suitable for a laser diode of1.1-1.3 μm wavelength band. By using a highly strained GaInAs, GaInNAsor GaAsSb layer formed on the GaAs substrate 101, a laser diode of1.1-1.3 μm wavelength band becomes possible. By using a material systemcapable of crystal growth on a GaAs substrate 101, a highly efficientvertical-cavity, surface-emission-type laser diode operable at thewavelength band of 1.3 μm or 1.55 μm or longer wavelength, which hashitherto been difficult to realize, is successfully realized.

Example 2

FIGS. 10A and 10B show the constitutional example of a vertical-cavity,surface-emission-type laser diode according to Example 2, wherein FIG.10B is an enlarged view of the active region of FIG. 10A. Thevertical-cavity, surface-emission-type laser diode of FIGS. 10A and 10Bis formed on n-GaAs substrate 201 having a surface orientation of (100)and includes an n-semiconductor distributed Bragg reflector(Al_(0.9)Ga_(0.1)As/GaAs lower reflector) 204 formed on the substrate201, wherein the n-semiconductor distributed Bragg reflector 204includes alternate lamination of an n-Al_(x)Ga_(1-x)As (x=0.9) layer andan n-Al_(x)Ga_(1-x)As (x=0) layer repeated for 35 periods withrespective thicknesses of ¼ times the oscillation wavelength (λ) asmeasured in each media. Further, an n-Ga_(x)In_(1-x)P_(y)As_(1-y)(x=0.5, y=1) layer (non-optical recombination elimination layer) 203having a thickness of λ/4 is laminated thereon. In Example 2, then-Ga_(x)In_(1-x)P_(y)As_(1-y) (x=0.5, y=1) layer 203 is a low-refractiveindex layer and forms a part of the lower reflector 204.

Further, a lower GaAs spacer layer 205 is formed on the lower reflector204, and a multiple quantum-well active layer 206 (triple quantum well(TQW) in Example 2) is formed on the lower GaAs spacer layer 205,wherein the triple quantum well active layer 206 consists of threeundoped Ga_(x)In_(1-x)N_(y)As_(1-y) quantum well layers 206 a acting asan active layer (quantum-well active layer) and corresponding GaAsbarrier layers 206 b (15 nm). Further, an undoped upper GaAs spacerlayer 207 is laminated thereon. As a result, an optical cavity having athickness of one wavelength of the oscillation wavelength as measured inthe media (thickness of λ) is formed.

Further, a p-semiconductor distributed Bragg reflector (the upperreflector) 209 is formed on the multiple quantum-well active layer 206.The upper reflector 209 includes a low-refractive index layer of thethickness of 3λ/4, wherein the low-refractive index layer includes anAlAs layer 230 that becomes a selectively oxidized layer such that theAlAs layer 230 is sandwiched by a GaInP layer 208 and an AlGaAs layer.The GaInP layer 208 is formed of a C-doped p-Ga_(x)In_(1-x)P_(y)As_(1-y)(x=0.5, y=1) layer (non-optical recombination elimination layer) havinga thickness of λ/4-15 nm, while the AlGaAs layer is formed of a C-dopedp-Al_(x)Ga_(1-x)As layer (x=0.9) having a thickness of 2λ/4-15 nm.Further, a C-doped p-Al_(z)Ga_(1-z)As (z=1) is provided for theselectively oxidized layer 203 with a thickness of 30 nm. On thelow-refractive index layer thus formed, a GaAs layer having a thicknessof λ/4 is laminated for one period, and a C-doped p-Al_(x)Ga_(1-x)Aslayer (x=0.9) and a p-Al_(x)Ga_(1-x)As (x=0) layer are formed on theGaAs layer alternately for 22 periods with respective thicknesses of ¼times the oscillation wavelength as measured in each medium. Thus, asemiconductor distributed Bragg reflector of Al_(0.9)Ga_(0.1)As/GaAsstructure is formed as the upper reflector 209.

Further, an uppermost layer 210 of p-Al_(x)Ga_(1-x)As (x=0) is formedthereon, wherein the uppermost layer 210 functions as a contact layer(p-contact layer) that makes a contact with a p-side electrode 212.

Here, it should be noted that the In content x of the quantum-wellactive layer 206 a is made to 37% and the N (nitrogen) content of thequantum-well active layer 206 a is made to 0.5%. Further, the thicknessof the quantum-well active layer 206 a is made to 7 nm. In the presentExample 2, the growth of the vertical-cavity, surface-emission-typelaser diode was conducted by an MOCVD process. Thereby, DMHy (dimethylhydrazine) was used for the source material of nitrogen, together withthe source materials of TMA (trimethyl aluminum), TMG (trimethylgallium), TMI (trimethyl indium), AsH₃ (arsine), or PH₃ (phosphine). Itshould be noted that DMHy decomposes at low temperature. Thus, thematerial is particularly suitable for low-temperature growth at 600° C.or less, and hence to the growth of highly strained quantum well layerthat requires a growth at low-temperatures. In Example 2, H₂ was usedfor the carrier gas. In Example 2, the GaInNAs layer (quantum-wellactive layer) 206 a was grown at 540° C. In view of the fact that highdegree of saturation is realized, an MOCVD process is thought suitablefor crystal growth of material layers that contain N in addition toother group V elements. Further, there is an advantage that an MOCVDprocess does not require high vacuum environment contrary to the case ofan MBE process. As the growth process can be conducted by merelycontrolling the flow rate and supply time of the source gases, an MOCVDprocess is particularly suitable for mass production of semiconductordevices.

In Example 2, the mesa structure of a predetermined size is formed by anetching process until the p-Ga_(x)In_(1-x)P_(y)As_(1-y) (x=0.5, y=1)layer 208 is reached and the sidewall surface of the p-Al_(z)Ga_(1-z)As(z=1) selectively oxidized layer 230 is exposed. The Al_(z)Ga_(1-z)As(z=1) layer 230 having the sidewall surface thus exposed is thenoxidized by water vapor, starting from the sidewall surface, and thereis formed an Al_(x)O_(y) current confinement part 220 as a result of theoxidation process. Next, the etched region is buried with a polyimideinsulation film 221 for planarization, and the polyimide film coveringthe upper reflector 209 is removed. Further, a p-side electrode 212 isformed on the p-contact layer 210 except for an optical beam exit region214, and an n-side electrode 213 is formed to the rear surface of theGaAs substrate 201.

In Example 2, the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer 208is provided under the selectively oxidized layer 230 as a part of theupper reflector 209. Thereby, the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1,0<y≦1) layer 208 functions as an etching stopper, provided that sulfuricacid etchant is used in the etching process to form the mesa structure.It should be noted that the material of the GaInPAs system functions asan etching stopper with regard to the material of the AlGaAs system. Byinserting the Ga_(s)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer 208, theheight of the mesa structure used for the selective oxidation process iscontrolled exactly. Because of this, homogeneity and reproducibility areimproved for the laser diode. Further, the cost is reduced also.

By using the vertical-cavity, surface-emission-type laser diode ofExample 2 to form a one-dimensional or two-dimensional array, theprocess control during the device fabrication process is improved,together with improvement of homogeneity and reproducibility of devicecharacteristics between the elements within the array.

In Example 2, the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer 208that doubles acting also as an etching stopper layer, was provided onthe side of the upper reflector 209. However, the layer 208 may beprovided on the side of the lower reflector 204.

In Example 2, the material containing Al was not used in the activeregion (optical cavity consisting of the upper spacer layer 207, thelower spacer layer 205 and the multiple quantum-well active layer 206 inExample 2) that is sandwiched between the upper and lower reflectors 204and 209 and causing recombination of carriers injected thereto. Further,the low-refractive index layer in the lower reflector 204 and the upperreflector 209 located closest to the active layer isGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1). Thus, Al is not contained inthe active region or in the interface region between the active regionand the reflector in Example 2. Because of this, the problem ofnon-optical recombination caused by crystal defects originating from Alis reduced even when carrier injection is made. In view of the object ofthe present invention, it is preferable to form the active region from alayer not containing Al.

As set forth in Example 2, it is preferable to use the construction ofeliminating Al from the interface between the reflector and the activeregion for both of the upper and lower reflectors 204 and 209. However,the use of such a construction to only one of the reflectors is alsoeffective. In example 2, it is also noted that both of the upper andlower reflectors 204 and 209 are formed of the semiconductor distributedBragg reflector. However, it is possible that only one of the reflectorsis formed of the semiconductor distributed Bragg reflector. In thiscase, the other reflector may be formed of a dielectric reflector.

In example 2, it should be noted that the present invention is appliedto the lower reflector 204 located between the GaAs substrate 201 andthe active layer 206. Because of this, the problem of crawling up ofcrystal defects originating from Al to the active layer 206 at the timeof growth of the active layer 206 and associated various adversaryeffects are suppressed. Because of this, the active layer 206 can begrown with high crystal quality, and the efficacy of optical emission inthe vertical-cavity, surface-emission-type laser diode is improved.Associated therewith, a reliability sufficient for practical use isachieved for the laser diode. In view of the construction of Example 2in which not the entire low-refractive index layers in the semiconductordistributed Bragg reflectors 204 and 209 are formed of the Al-freeGa_(x)In_(1-x)P_(y)As_(1-y) (0≦x≦1, 0<y≦1) layer but theGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer is used only for thelayers 203 and 208 located closest to the active region, it becomespossible to obtain the above-mentioned effect without increasing thenumber of stacking of the reflector. Because of this, planarizationprocess by using the polyimide layer can be achieved easily. Associatedtherewith, the problem of interconnection pattern (p-side electrode 212in Example 2) being discontinued at a stepped part is successfullyavoided, and there occurred no degradation in the yield deviceproduction.

The vertical-cavity, surface-emission-type laser diode thus producedoscillated at the wavelength of was about 1.3 μm. As a result of use ofGaInNAs in the active layer 206 in Example 2, it became possible to forma vertical-cavity, surface-emission-type laser diode operable at a longwavelength band on the GaAs substrate 201. Further, as a result offormation of the current confinement structure by selective oxidation ofthe selectively oxidized layer 230 that contains Al and As as theprincipal component, it becomes possible to reduce the thresholdcurrent. By using the current confinement structure that uses thecurrent confinement part 220 of Al oxide formed by selective oxidationof the selectively oxidized layer 230, the current confinement part 220can be formed closer to the active layer 206 and the spreading of theelectric current is suppressed. Thus, the carriers are confinedefficiency into a minute region not exposed to the atmosphere. Further,the Al oxide film formed as a result of oxidation process ischaracterized by a small refractive index. Because of this, the opticalbeam is confined efficiently by a convex lens effect into the minuteregion in which the carriers are confined. Thereby, the efficiency ofthe vertical-cavity, surface-emission-type laser diode is improvedfurther and the threshold current is reduced further. According toExperiment 2, it should be noted that the current confinement structurecan be formed easily. Because of this, the fabrication cost of the laserdiode is reduced. Thus, according to Example 2, a low-costvertical-cavity, surface-emission-type laser diode of the 1.3 μm bandhaving a reduced electric power consumption is provided.

The vertical-cavity, surface-emission-type laser diode of FIG. 10 can begrown by the MOCVD process as noted before. However, it is also possibleto grow the laser diode by other process such as MBE process. Further,it is noted that DMHy is used as the source material of nitrogen inExample 2. However, other nitrogen compound such as activated nitrogenor NH₃ can also be used. In Example 2, a triple quantum well structure(TQW) was shown as the layered structure of the active layer 206.However, it is possible to use a structure (SQW, DQW, MQW) in which thenumber of the wells used the quantum well is different from the triplequantum well structure. Further, it is possible to use a different laserdiode structure.

In the vertical-cavity, surface-emission-type laser diode of FIG. 10,operation at a longer wavelength such as 1.55 μm band or more becomespossible by adjusting the composition of the GaInNAs active layer 206 a.Further, it should be noted that the GaInNAs active layer 206 a maycontain other III-V elements such as Tl, Sb, P etc. Further, it ispossible that the vertical-cavity, surface-emission-type laser diode of1.3 μm band can be realized also on the GaAs substrate 201 by usingGaAsSb for the active layer 206 a. In the case of using GaInAs for theactive layer 206 a, it is possible to grow a highly strained GaInAsquantum-well active layer with a large thickness not possible hithertoby using a low-temperature growth of 600° C. or less similarly asbefore. Thereby, an oscillation wavelength of 1.2 μm can be attained,while this wavelength is longer than the wavelength of 1.1 μm, which washitherto thought as being the limit. Conventionally, no suitablematerial has been known for realizing a laser diode operable at thewavelength of 1.1-1.3 μm. By using highly strained GaInAs, GaInNAs orGaAsSb, a laser diode operable at the wavelength of 1.1-1.3 μm bandbecomes possible. Further, it becomes possible to realize a highlyefficient vertical-cavity, surface-emission-type laser diode operable atlong wavelength of the 1.3 μm band or 1.55 μm band, in which wavelengthband, it has hitherto been difficult to operate the laser diode withhigh performance.

Example 3

Example 3 relates to an optical transmission module. FIG. 11 shows thegeneral construction of the optical transmission module in which aquartz optical fiber is coupled with a 1.3 μm band GaInNAsvertical-cavity, surface-emission-type laser diode of Example 2.Referring to FIG. 11, the optical signal (laser beam) is injected intothe optical fiber from the laser diode, and the optical signal thusinjected is transmitted along the optical fiber. Thereby, thetransmission rate can be increased by using a wavelength multipletransmission technique that uses a plurality of laser diodes havingdifferent oscillation wavelengths configured in one-dimensional ortwo-dimensional array. Further, it is possible to increase thetransmission rate I by using an optical fiber bundle consisting of aplurality of optical fibers corresponding to each laser diode forming aone-dimensional or two-dimensional array together with other laserdiodes.

By using the vertical-cavity, surface-emission-type laser diode of thepresent invention in the optical telecommunication system, the cost ofthe optical telecommunication system that uses an optical transmissionmodule, in which a transmitter laser diode and an optical fiber arecoupled, is reduced substantially, in view of the low cost of thevertical-cavity surface-emission type laser diode of the presentinvention. In view of the fact that the temperature characteristics ofthe GaInNAs vertical-cavity surface-emission type laser diode isexcellent and in view of the laser diode is characterized by lowthreshold of laser oscillation, the heat generation associated withoperation of the laser diode is reduced and the system can be usedwithout cooling up to high temperatures. Further, it is possible tocouple the GaInNAs vertical-cavity, surface-emission-type laser diodewith a fluorine added POF (plastics optical fiber) that shows a lowoptical loss at the wavelength longer than the 1.3 μm band. In thiscase, the optical fiber is low cost and the diameter of the opticalfiber is large enough for facilitating optical coupling. Thus, themounting cost is reduced and the optical module can be realized withextremely low cost.

Example 4

Example 4 is related to an optical transceiver module. FIG. 12 shows thegeneral construction of the optical transceiver module, in which the 1.3μm band GaInNAs vertical-cavity, surface-emission-type laser diode ofExample 2 and a receiver photodiode are coupled with an optical fiber ofexample 2.

By using the vertical-cavity, surface-emission-type laser diode of thepresent invention in the optical telecommunication system, the cost ofthe optical telecommunication system that uses an optical transceivermodule, in which a transmitter laser diode, a receiver photodetector andan optical fiber are coupled, is reduced substantially, in view of thelow cost of the vertical-cavity surface-emission type laser diode of thepresent invention. In view of the fact that the temperaturecharacteristics of the GaInNAs vertical-cavity surface-emission typelaser diode is excellent and in view of the fact that the laser diode ischaracterized by low threshold of laser oscillation, the heat generationassociated with operation of the laser diode is reduced and the systemcan be used without cooling up to high temperatures. Further, it ispossible to couple the GaInNAs vertical-cavity, surface-emission-typelaser diode with a fluorine added POF (plastics optical fiber) thatshows a low optical loss at the wavelength longer than the 1.3 μm band.In this case, the optical fiber is low cost and the diameter of theoptical fiber is large enough for facilitating optical coupling. Thus,the mounting cost is reduced and the optical module can be realized withextremely low cost.

It should be noted that the optical telecommunication system that usesthe vertical-cavity, surface-emission-type laser diode of the presentinvention is by no means limited to a long-distance telecommunicationsystem that uses an optical fiber. For example, the opticaltelecommunication system of the present invention is applicable toshort-distance telecommunication including device-to-device dataexchange in computers and local area networks (LAN). Furthermore, thepresent invention is applicable to data exchange between large-scaleintegrated circuits or inside a large-scale integrated circuit. Further,the present invention is applicable to data exchange between printedcircuit boards. In recent years, the processing performance oflarge-scale integrated circuits has been improved remarkably. Thus, thetransmission rate in the part connecting large-scale integrated circuitsis becoming a bottleneck of overall system performance. Thus, byreplacing the conventional electric interconnection by optical signalinterconnection inside a system by way of using optical transmissionmodules or optical transceiver modules, examples of which may bedevice-to-device optical interconnection inside a large-scale integratedcircuit, optical interconnection between large-scale integrated circuitsin a circuit board, or optical interconnection between circuit boards ina computer system, a ultrahigh speed computer system becomes possible.Further, a ultrahigh speed network system is realized when a pluralityof computer systems, and the like, are interconnected by using theabove-mentioned optical transmission modules or optical transceivermodules.

Especially, a vertical-cavity, surface-emission-type laser diodeconsumes incommensurably small electric power as compared with anedge-emission type laser diode and is particularly suited forconstructing a two-dimensional array. Because of this, the laser diodeis suitable for constructing a parallel optical telecommunicationsystem.

Example 5

In Example 5, a vertical-cavity, surface-emission-type laser diode isprovided having a construction similar to that of the laser diode ofExample 2 except that the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1)layers 203 and 208 in the constitution of FIGS. 10A and 10B acting as anon-optical recombination elimination layer has a composition ofGa_(x)In_(1-x)P_(y)As_(1-y) (x=0.55, y=0).

Thus, in the vertical-cavity, surface-emission-type laser diode ofExample 5, the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layers 203 and208 accumulate therein a strain. Because of this, there is achieved aneffect, in addition to the effect of Example 2, to suppress the crawlingup of the defects existing in the substrate or formed during the growthprocess, at least partially at the time of growth of the epitaxiallayers. As a result, the efficacy of optical emission is improvedsubstantially. Further, even in the case the crystal quality of then-side multilayer reflector (lower reflector) 204 is moderate, it waspossible to grow an active layer having a large strain easily. Thus, inthis example, it is possible to grow an active layer accumulating acompressive strain of 2% or more. Further, it becomes possible to grow astrained layer with a thickness exceeding the critical thickness.

It should be noted that the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1)layers 203 and 208 make a contact with the active region. In view of thefact that there occurs an increase of bandgap energy with decrease oflattice constant in the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1)layers 203 and 208, the height of the hetero barrier formed between theactive region and the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) isincreased. As a result, the efficiency of carrier confinement isimproved and the threshold current is reduced. Thereby, the temperaturecharacteristics are improved. More specifically, in Example 5, thebandgap became larger by about 70 meV as compared with the device ofExample 2 (Ga_(0.5)In_(0.5)P).

Example 6

In Example 6, the vertical-cavity, surface-emission-type laser diode isdifferent from the device of Example 2 in the point that theGa_(x)In₁₋P_(y)As_(1-y) (0<x≦1, 0<y≦1) layers 203 and 208 acting as anon-optical recombination elimination layer in the construction of FIGS.10A and 10B are formed of Ga_(x)In_(1-x)P_(y)As_(1-y) (x=0.45, y=1).

Thus, in the vertical-cavity, surface-emission-type laser diode ofExample 6, the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layers 203 and208 accumulate therein a strain. Because of this, there is achieved aneffect, in addition to the effect of Example 2, to suppress the crawlingup of the defects existing in the substrate or formed during the growthprocess, at least partially at the time of growth of the epitaxiallayers. As a result, the efficacy of optical emission is improvedsubstantially. Further, even in the case the crystal quality of then-side multilayer reflector (lower reflector) 204 is moderate, it waspossible to grow an active layer having a large strain easily. Thus, inthis example, it is possible to grow an active layer accumulating acompressive strain of 2% or more. Further, it becomes possible to grow astrained layer with a thickness exceeding the critical thickness.

Furthermore, in Example 6, it should be noted that the sense of thestrain in the Ga_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layers 203 and208 is the same as the sense of the strain in the active layer 206 a.Because of this, one obtains an advantageous effect in that the actualcompressive strain that the active layer 206 a senses is reduced, inaddition to the effect that the strained layer is inserted. Because ofthis, the influence of the defects existing on the surface of thefoundation layer in the state immediately before the growth of theactive layer is reduced. As a result, the active layer was grown withimproved quality and the characteristics of the laser diode wereimproved.

It turned out that the present invention is particularly effective inthe case of the vertical-cavity, surface-emission-type laser diode oflong wavelength band that requires a thick film growth process. Forexample, in the case of the 1.3 μm band GaInNAs vertical-cavity,surface-emission-type laser diode formed on a GaAs substrate, it isnecessary to grow 50-80 semiconductor layers with a total thickness of5-8 μm before the growth of the active layer, in view of the use of thesemiconductor multilayer reflector for the optical cavity. In the caseof an edge-emission type laser diode, on the contrary, the totalthickness before the growth of the active layer is about 2 μm. In thiscase, it is sufficient to grow only about three semiconductor layers. Inthe case of the vertical-cavity, surface-emission-type laser diode ofsuch a long wavelength band, the defect density of the foundation layersurface, on which the growth of the active layer is made, increasesinevitably in the state immediately before the growth of the activelayer, as compared with the defect density of the GaAs substrate surfaceby various reasons, even in the case a GaAs substrate of high quality isused. (It should be noted that the defect once occurred generally crawlsup in the direction of crystal growth. Further, there can be defectformation, and the like, at the hetero interface.) By reducing theactual compressive strain that the active layer senses or by inserting astrained layer before the growth of the active layer, the adversaryinfluence caused by the defects existing on the foundation layer surfaceimmediately before the growth of the active layer is reduced. Because ofthis, it becomes possible to conduct a thick film growth such as the oneused in the vertical-cavity, surface-emission-type laser diode, easilywith high crystal quality.

Example 7

FIGS. 20A and 20B show the construction of a vertical-cavity,surface-emission-type laser diode according to Example 7, wherein FIG.20B shows an enlarged view of the active region of FIG. 20A.

Referring to FIGS. 20A and 20B, the vertical-cavity,surface-emission-type laser diode of Example 7 is formed on an n-GaAssubstrate 301 and includes a lower reflector 302, a non-opticalrecombination elimination layer 303, a multiple quantum-well activelayer 306, and an upper reflector 309 laminated consecutively on theGaAs substrate 301. Here, the lower reflector 302 is formed by alternatelamination of an n-Al_(x)Ga_(1-x)As (x=0.9) layer and ann-Al_(x)Ga_(1-x)As (x=0) layer. Further, the multiple quantum-wellactive layer 306 is formed of three active layers each formed of aGa_(x)In_(1-x)N_(y)As_(1-y) quantum well layer (quantum-well activelayer) 306 a and corresponding GaAs barrier layers 306 b. In otherwords, in the vertical-cavity, surface-emission-type laser diode ofExample 7, the lower reflector 302 contains Al, while the active layer306 contains nitrogen. In FIGS. 20A and 20 b, the reference numeral 340designates a low-refractive index layer having the thickness of 3λ/4.

In the production of the vertical-cavity, surface-emission-type laserdiode of FIGS. 20A and 20B, the crystal growth was conducted by an MOCVDprocess. Thereby, TMA was used as the Al source material when growing alayer containing Al, while DMHy was used as the source material ofnitrogen when growing a layer (GaInNAs layer) containing nitrogen.

The difference between the device Example 7 and the device of Example 2is that the growth of the GaAs layer 310 located underneath thenon-optical recombination elimination layer 303 is interrupted midway ofgrowth thereof with (at the part shown with a dashed line B). During theinterruption of the growth, the Al source material, Al product, Alcompound or Al remaining in the growth chamber where the nitrogen sourcecompound or impurity therein may make a contact therewith is removed bya purging process that uses a hydrogen carrier gas. In Example 7, thepurging process was conducted for the duration of 60 minutes. During theinterruption of growth in Example 7, the wafer was left in the reactionchamber.

In this way, the Al concentration in the GaInNAs active layer 306 wasreduced to 3×10¹⁷ cm⁻³ or less, and the oxygen concentration level inthe GaInNAs active layer 306 was reduced to 1×10¹⁷ cm⁻³, or backgroundlevel. Thereby, the efficacy of optical emission of the active layer 306containing nitrogen was improved and the threshold current of the devicewas reduced.

In Example 7, it is noted that the interruption of growth was madeduring the growth of the GaAs layer 310 located underneath thenon-optical recombination elimination layer 303. However, such aninterruption growth may be made during the growth of the non-opticalrecombination elimination layer 303.

In Example 7, the growth of the crystal layer was interrupted andpurging of the Al source material, Al product, Al compound or Al wasconducted. However, it is also possible to reduce the growth ratewithout doing interrupting the growth. In this case, the durationbetween the growth of the layer containing Al and the growth of thelayer containing nitrogen is increased, and the purging can be madewhile continuing the grow process.

In example 7, the upper non-optical recombination elimination layer isnot provided unlike the device of Example 2. Further, the non-opticalrecombination elimination layer is not used as an etching stopper.However, it is as well possible to construct as in the case of Example2.

Example 8

FIGS. 21A and 21B show the example of a vertical-cavity,surface-emission-type laser diode according to Example 8, wherein FIG.21B shows an enlarged view of the active region of FIG. 21A.

Referring to FIGS. 21A and 21B, the vertical-cavity surface-emissiontype laser diode of Example 8 is formed on a n-GaAs substrate 401 andincludes an n-semiconductor distributed Bragg reflector (lowerreflector) 410, an optical cavity part 413, and a p-semiconductordistributed Bragg reflector (upper reflector) 412 laminatedconsecutively on the n-GaAs substrate 401. It should be noted that theuppermost layer of the lower reflector 410 is formed of an AlGaAslow-refractive index layer 409. Further, the lowermost layer of theupper reflector 412 is formed of an AlGaAs low-refractive index layer411. Further, the optical cavity part 413 is formed of an active layer406 which in turn is formed of three GaInNAs quantum well layers 406 aand corresponding GaAs barrier layers 406 b, first GaAs barrier layers405 and 407, and GaInP non-optical recombination elimination layers(second barrier layer) 403 and 408.

The difference between the vertical-cavity, surface-emission-type laserdiode of Example 8 and the device of Example 2 is that the non-opticalrecombination elimination layers 403 and 408 are formed inside theoptical cavity 413. Further, in Example 8, the thickness of the opticalcavity 413 is set to one wavelength.

In the structure of FIGS. 21A and 21B, it should be noted that the GaInPnon-optical recombination elimination layers (the second barrier layer)403 and 408 have a bandgap larger than the bandgap of GaAs first barrierlayers 405 and 407. Further, the active region in which carrier injectedis made extends substantially up to the GaAs first barrier layers 405and 407. Because of this, the effect similar to the device of Example 2is obtained.

In the of interrupting the growth the crystal layers like the device ofExample 7, it is possible to conduct such an interruption process midwayof the growth of lower non-optical recombination elimination layer 403.Alternatively, the interruption may be made during the growth of a GaAslayer is provided between the lower non-optical recombinationelimination layer 403 and the layer containing Al (such as the layer409).

Further, the present invention is not limited to the embodimentsdescribed heretofore, but various variations and modifications may bemade without departing from the scope of the present invention.

Present invention is based on Japanese patent applications 2000-286477filed on Sep. 21, 2000, 2001-068588 filed on Mar. 12, 2001 and2001-214930 filed on Jul. 16, 2001, the entire contents of which areincorporated herein as reference.

1. A vertical-cavity, surface-emission-type laser diode comprising: asemiconductor substrate; and an optical cavity structure provided on orabove said semiconductor substrate, said optical-cavity structurecomprising an active region containing at least one active layer thatproduces a laser beam, and upper and lower reflectors sandwiching saidactive region to form said optical cavity, said lower reflectorincluding a semiconductor distributed Bragg reflector having arefractive index that changes periodically, said lower reflectorreflecting an optical beam incident thereto by diffraction, saidsemiconductor distributed Bragg reflector comprising alow-refractive-index layer of Al_(x)Ga_(1-x)As (0<x≦1) and ahigh-refractive-index layer of Al_(y)Ga_(1-y)As (0≦y<x≦1), wherein aGa_(x)In_(1-x)P_(y)As_(1-y) (0<x≦1, 0<y≦1) layer forms a part of saidlower reflector.
 2. A vertical-cavity, surface-emission-type laser diodeas claimed in claim 1, wherein said Ga_(x)In_(1-x)P_(y)As_(1-y)s (0<x≦1,0<y≦1) layer forms a low-reflective index layer in said lower reflector.3. A vertical-cavity, surface-emission-type laser diode as claimed inclaim 1, wherein said at least one active layer contains nitrogentherein.
 4. A vertical-cavity, surface-emission-type laser diode asclaimed in claim 1, wherein said at least one active layer comprises anyof GaNAs, GaNPAs, GaInNAs, GaNAsSb and GaInNAsSB.
 5. A vertical-cavity,surface-emission-type laser diode as claimed in claim 1, wherein saidactive layer accumulates a compressive strain of 2.0% or more.
 6. Avertical-cavity, surface-emission-type laser diode as claimed in claim1, wherein a part between said active layer and said upper reflector isfree from GaInPAs.